InGaAsP Quaternary Materials for Near Infrared Detector and Laser Applications

摘要

In this project we have been concerned with the liquid phase epitaxial (LPE) and vapor phase epitaxial (VPE) growth of this quaternary system. A number of the basic features of the LPE growth of InGaPAs on InP have been identified. InP-In sub 1-x Ga sub x P sub 1-2 As sub z heterostructure lasers and detectors have been constructed and have been studied.