High-temperature (130 degrees C) CW operation of 1.53 mu m InGaAsP ridge-waveguide lasers using strained quaternary quantum wells

摘要

Minimum threshold current density of 0.57 kA/cm/sup 2/ and high T/sub 0/ values up to 74 K were obtained from 400 mu m long broad area lasers with MOVPE grown compressively strained all-quarternary GaInAsP SCH-MQW layer structures for 1.53 mu m emission wavelength. With 3 mu m*400 mu m RW laser diodes (T/sub 0/<90 K) high-temperature CW operation up to 130 degrees C was achieved.