In(x)Al(1-x)As/InP Heterojunction Insulated Gate Field Effect Transistors (HIGFET's)

摘要

Stability problems in conventional InP metal-insulator-semiconductor field effect transistors (MISFET's) have been overcome in InP heterojunction insulated gate FET's (HIGFET's) by replacing the insulator with In(x)Al(1-x)As. We report on the fabrication and low-frequency operation of the HIGFET with a composition of x = 0.43. Transistor characteristics have been successfully modeled by an analytical MISFET model which indicate a low interfacial state density (approx. 10 to the 11th power per sq cm) and near flat-band condition.