P- and n-channel InAlAs/InGaAs heterojunction insulated gate FETs (HIGFETs) on InP

摘要

The simultaneous fabrication of enhancement-mode p-channel and n-channel heterojunction insulated gate FETs (HIGFETs) using InAlAs/InGaAs/InAlAs heterostructure layers on InP substrates is discussed. Near 1- mu m gate length, e-mode p-channel HIGFETs are shown to have a threshold voltage near -0.66 V, sharp pinchoff, 0.9-V gate diode turn-on, and a room-temperature extrinsic transconductance <20 mS/mm. The adjacent (complementary) n-channel HIGFETs are shown to exhibit e-mode operation (threshold V/sub tn/=0.16 V), low leakage, 0.9-V gate diode turn-on, and high transconductance (g/sub m/<320 mS/mm).