A-Heterojunction and Dielectrically Insulated Gate InP Field Effect Transistors

摘要

Experimental data are presented on d.c. drain current instabilities in depletion mode insulated gate InP field effect transistors (D-MISFETs). d.c. drain current decay with time exhibited by InP MISFETs represents impediment to their use. New data presented here suggest that the models proposed to account for this instability may have to be revised. The construction and properties of a different type of device employing semi-insulating In(x)Al(1-x)As as the gate insulator is described. It is shown that such heterojunction insulated gate field effect transistors have none of the d.c. instabilities associated with MISFETs and that they provide good prospects for applications which require high frequency and high power performance.