Improved Strained HEMT (High Electron Mobility Transistors) Characteristics Using Double-Heterojunction In(0.65)Ga(0.35)As/In(0.52)Al(0.48)As Design.

摘要

The dc and microwave properties of strained In(0.65)Ga(0.35)As/In(0.52)Al(0.48)As High Electron Mobility Transistors with double-heterojunction design are presented. The high sheet carrier density and good carrier confinement give rise to excellent device performance with very low output conductance. For 1 X 150- sq. micrometer long-gate HEMT's, the measured cutoff frequency f(T) and maximum frequency of oscillation f(max) are as high as 37 and 66 GHz, respectively. Keywords: Indium gallium arsenides, Indium aluminum arsenides, Reprints. (aw)