Ellipsometry Investigation of Nucleation and Growth of Electron Cyclotron Resonance Plasma Deposited Silicon Films.

摘要

The nucleation and initial growth of Si films is fundamental to the understanding and control of rapid thermal CVD, RTCVD, and plasma enhanced CVD, PECVD processes. Herein we report on the nucleation and growth of Si deposited on oxidized silicon wafers by ECR PECVD in 600-700 deg C temperature range, under low-pressures, and using both in situ spectroscopic ellipsometry (SE) and single wavelength realtime ellipsometry. An island growth and coalescence model is used to interpret the real-time ellipsometry data. Initial nuclei distance and growth-parameters are derived. Atomic Force Microscopy (AFM) was used to observe the early stage of nucleation. In situ spectroscopic ellipsometry is used to measure the final Si film thicknesses and optical properties. The structure of the deposited crystalline Si films were characterized by XTEM.