Short-Wavelength Room-Temperature Continuous-Wave Laser operation of InAlP-InGaPSuperlattices Grown by Metalorganic Chemical Vapor Deposition

摘要

The growth and laser operation of high-quality InAIP-InGaP superlattice-active-region quantum well heterostructure lasers on GaAs substrates are reported. These heterostructures exhibit cw room-temperature (300 K) optically pumped laser operation at wavelengths as short as A-586 nm (yellow, Ehv-2.11 eV). This is the shortest wavelength room-temperature cw laser operation reported to date for any III-V material system. (jg).