Short-Wavelength Room-Temperature cw Laser Operation of InAlP-InGaP SuperlatticesGrown by Metalorganic Chemical Vapor Deposition

摘要

The growth and laser operation of high-quality InAlP-InGaP superlattice-active-region quantum-well heterostructure lasers on GaAs substrates are reported. These heterostructures exhibit cw room-temperature (300 K) optically pumped laser operation at wavelengths as short as X-586 nm (yellow, Ehv 2.11 eV). This is the shortest wavelength room-temperature cw laser operation reported to date for any 111-V material system.