Room-temperature continuous-wave operation of AlGaAs-GaAs single-quantum-well lasers on Si by metalorganic chemical-vapor deposition using AlGaAs-AlGaP intermediate layers

摘要

The heterointerfaces of single quantum wells and the characteristics of single-quantum-well lasers on Si substrates grown with Al/sub 0.5/Ga/sub 0.5/As-Al/sub 0.55/Ga/sub 0.45/P intermediate layers entirely by metalorganic chemical-vapor deposition are reported. The effects of thermal cycle annealing on the crystallinity and lasing characteristics of GaAs-Si are also reported. Thermal cycle annealing is found to improve the crystallinity of GaAs-Si, and to contribute to room-temperature continuous-wave operations of lasers on Si substrates. By using the Al/sub 0.5/Ga/sub 0.5/As-Al/sub 0.55/Ga/sub 0/ intermediate layers, single quantum wells with a specular surface morphology and a smoother heterointerface can be grown on an Si substrate.