Room-temperature continuous-wave operation of 1.24-/spl mu/m GaInNAs lasers grown by metal-organic chemical vapor deposition

摘要

Room-temperature continuous-wave operation is demonstrated for the first time in a GaInNAs-GaAs laser grown by metal-organic chemical vapor deposition. A low-threshold current density of 660 A/cm/sup 2/ and a high characteristic temperature of 113 K emitting at 1.245 /spl mu/m is achieved. Emitting at the longest wavelength of 1.225 /spl mu/m is also demonstrated in a highly strained GaInAs-GaAs double-quantum-well laser on a GaAs substrate by increasing the In content up to 39%. A low-threshold current density of about 200 A/cm/sup 2/ in a wavelength range up to 1.2 /spl mu/m is achieved.