High-temperature characteristic in 1.3-/spl mu/m-range highly strained GaInNAs ridge stripe lasers grown by metal-organic chemical vapor deposition

摘要

1.3-/spl mu/m-range highly strained GaInNAs-GaAs double quantum-well ridge stripe lasers with different In contents (37% and 39%) grown by metal-organic chemical vapor deposition are demonstrated. The GaInNAs laser with In content of 37% emitting at 1.294 /spl mu/m exhibited both a low threshold current density of 1.0 kA/cm/sup 2/ at 20/spl deg/C and a high characteristic temperature of 148 K in the temperature range of 20/spl deg/C-80/spl deg/C.