Low-threshold and high-temperature characteristics of 1.3-/spl mu/m InGaAlAs MQW lasers grown by metalorganic vapor-phase epitaxy

机译：金属有机气相外延生长的1.3- / splμm/ m InGaAlAs MQW激光器的低阈值和高温特性

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

We have investigated the growth conditions of the InGaAlAs MQW structure. After optimal growth, ridge-stripe InGaAlAs lasers had a very low threshold current at high temperature (13 mA, 85/spl deg/C), a high characteristic temperature (91 K). Moreover, good reliability was obtained.

机译：我们已经研究了InGaAlAs MQW结构的生长条件。经过最佳生长后，在高温（13 mA，85 / spl deg / C）和高特征温度（91 K）下，脊状InGaAlAs激光器的阈值电流非常低。此外，获得了良好的可靠性。

著录项

来源
《Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on》|2000年|P.266-269|共4页
会议地点
作者
Tsuchiya; T.; Takemoto; D.;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类无线电电子学、电信技术;
关键词

相似文献

外文文献
中文文献
专利

1. Low-threshold 1.3-/spl mu/m InGaAsN:Sb-GaAs single-quantum-well lasers grown by molecular beam epitaxy [J] . Yang X., Heroux J.B. IEEE Photonics Technology Letters . 2000,第2期

机译：通过分子束外延生长的低阈值1.3- / splμm/ m InGaAsN：Sb-GaAs单量子阱激光器
2. 12.5-gb/s direct Modulation up to 115/spl deg/C in 1.3-/spl mu/m InGaAlAs-MQW RWG DFB lasers with notch-free grating structure [J] . Nakahara K., Tsuchiya T., Kitatani T., Journal of Lightwave Technology . 2004,第1期

机译：在具有无缺口光栅结构的InGaAlAs-MQW RWG DFB激光器中，以1.3- / splμ/ m的速度高达12.5 gb / s的直接调制度高达115 / spl deg / C
3. 1.3-/spl mu/m InAsP n-type modulation-doped MQW lasers grown by gas-source molecular beam epitaxy [J] . Shimizu H., Kumada K. IEEE journal of selected topics in quantum electronics . 1999,第3期

机译：气体源分子束外延生长的1.3 / splμm/ m InAsP n型调制掺杂MQW激光器
4. Low-threshold and high-temperature characteristics of 1.3-/spl mu/m InGaAlAs MQW lasers grown by metalorganic vapor-phase epitaxy [C] . Tsuchiya T., Takemoto D., Institute of Electric and Electronic Engineer International Conference on Indium Phosphide and Related Materials . 2000

机译：低阈值和高温特性为1.3- / SPL MU / M INGAALAS MQW激光器，由Metalorganic气相外延生长
5. Indium gallium arsenide phosphide/indium phosphide 1.3 micron double heterostructure laser grown on silicon substrate by metalorganic vapor phase epitaxy [D] . Mobarhan, Kamran S. 1994

机译：金属有机气相外延在硅衬底上生长砷化铟镓磷化物/磷化铟1.3微米双异质结构激光器
6. Reduction of dislocations in α-Ga2O3 epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate [O] . Hoki Son, Ye-ji Choi, Soon-Ku Hong, 2021

机译：卤化物气相外延在锥形截肢型蓝宝石衬底上生长的α-GA2O3癫痫脱位的减少
7. Low-threshold continuous-wave operation of quantum-cascade lasers grown by metalorganic vapor phase epitaxy [O] . Mariano Troccoli, David Bour, Scott Corzine, 2004

机译：由金属机气相外延生长的量子级联激光器的低阈值连续波操作
8. Low-Threshold GaAs/AlGaAs Lasers Grown on Si by Organometallic Vapor Phase Epitaxy [R] . Choi, H. K., Lee, J. W., Salerno, J. P., 1988

机译：通过有机金属气相外延在si上生长的低阈值Gaas / alGaas激光器

Low-threshold and high-temperature characteristics of 1.3-/spl mu/m InGaAlAs MQW lasers grown by metalorganic vapor-phase epitaxy

摘要

著录项

相似文献

相关主题

期刊订阅