Room-temperature continuous-wave operation of 1.24-Μm GaInNAslasers grown by metal-organic chemical vapor deposition

摘要

Room-temperature continuous-wave operation is demonstrated for thenfirst time in a GaInNAs-GaAs laser grown by metal-organic chemical vaporndeposition. A low-threshold current density of 660 A/cm2 andna high characteristic temperature of 113 K emitting at 1.245 Μm isnachieved. Emitting at the longest wavelength of 1.225 Μm is alsondemonstrated in a highly strained GaInAs-GaAs double-quantum-well lasernon a GaAs substrate by increasing the In content up to 39%. Anlow-threshold current density of about 200 A/cm2 in anwavelength range up to 1.2 Μm is achieved