METAL-ORGANIC VAPORIZING AND FEEDING APPARATUS, METAL-ORGANIC CHEMICAL VAPOR DEPOSITION APPARATUS, METAL-ORGANIC CHEMICAL VAPOR DEPOSITION METHOD, GAS FLOW RATE REGULATOR, SEMICONDUCTOR MANUFACTURING APPARATUS, AND SEMICONDUCTOR MANUFACTURING METHOD

摘要

A metal-organic vaporizing and feeding apparatus includes: a retention vesselforretaining a metal-organic material; a bubbling gas feeding path connected totheretention vessel, for feeding bubbling gas to the metal-organic material; ametal-organicgas feeding path connected to the retention vessel, for feeding metal-organicgasgenerated in the retention vessel and dilution gas to a deposition chamber; adilution gasfeeding path connected to the metal-organic gas feeding path; for feeding thedilutiongas to the metal-organic gas feeding path; a flow rate regulator provided inthe bubblinggas feeding path, for regulating flow rate of the bubbling gas; a pressureregulator forregulating pressure of the dilution gas; and a sonic nozzle disposed in themetal-organicgas feeding path on a downstream side of a connecting position between themetal-organic gas feeding path and the dilution gas feeding path.