METAL-ORGANIC VAPORIZING AND FEEDING APPARATUS, METAL-ORGANIC CHEMICAL VAPOR DEPOSITION APPARATUS, METAL-ORGANIC CHEMICAL VAPOR DEPOSITION METHOD, GAS FLOW RATE REGULATOR, SEMICONDUCTOR MANUFACTURING APPARATUS, AND SEMICONDUCTOR MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a metal-organic vaporizing and feeding apparatus which can be simplified, metal-organic chemical vapor deposition apparatus, gas flow rate regulator, semiconductor manufacturing apparatus, and semiconductor manufacturing method.;SOLUTION: The metal-organic vaporizing and feeding apparatus includes a retention vessel 1 for retaining a metal-organic material 13, a bubbling gas feeding path 3 which is connected to the retention vessel 1 and feeds bubbling gas to the metal-organic material 13, a metal-organic gas feeding path 5 which is connected to the retention vessel 1 and feeds the organic metal gas produced in the retention vessel 1 and dilution gas to a deposition chamber, a dilution gas feeding path 7 which is connected to the metal-organic gas feeding path 5 and feeds the dilution gas to the metal-organic gas feeding path 5, a flow rate regulator 9 which is provided in the bubbling gas feeding path 3 and regulates the flow rate of the bubbling gas, a pressure regulator 11 which regulates the pressure of the dilution gas, and a sonic nozzle S which is disposed in the metal-organic gas feeding path 5 on a downstream side of a connecting position between the metal-organic gas feeding path 5 and the dilution gas feeding path 7.;COPYRIGHT: (C)2008,JPO&INPIT