1.3 /spl mu/m continuous-wave operation of GaInNAs lasers grown by metal organic chemical vapour deposition

摘要

1.3 /spl mu/m continuous-wave operation of highly strained GaInNAs/GaAs double quantum-well lasers grown by metal organic chemical vapour deposition has been demonstrated. The threshold current and threshold current density of the 700 /spl mu/m long laser at 20/spl deg/C were 63 mA and 1.2 kA/cm/sup 2/, respectively. These are the lowest values ever reported for 1.3 /spl mu/m GaInNAs/GaAs lasers under continuous wave operation. Characteristic temperatures as high as 128 K were observed under continuous-wave operation.