Crystalline quality improvement in silicon films on sapphire using recrystallization from the silicon-sapphire interface

摘要

The use of the process of solid-phase recrystallization reduces to a great extent the number of defects in the silicon layer. An amorphous layer was formed by implantation of silicon ions. The crystalline quality of the SOS structures has been assessed by the method of high-resolution double-crystal X-ray diffraction. Silicon layers with a thickness d = 1000-2500 ? and a high crystalline quality have been obtained after implantation of 150-keV silicon ions with subsequent high-temperature annealing.