Defect-Related Dielectric Breakdown, Change Trapping, and Interface-State Generation of Gate Oxides Grown on Zone-Melting-Recrystallized Silicon-on-Insulator Films

摘要

Dielectric breakdown has been investigated for gate oxides grown on 0.3- and 1-micrometer-thick zone-melting-recrystallized (ZMR) silicon-on-insulator films, and also for oxides on 0.65- and 0.84-micrometer-thick films thinned from 1-micron-thick films by thermal oxidation. In addition, charge trapping and interface-state generation have been studied for 1-micrometer-thick ZMR films. The gate oxide grown on a 1-micrometer-thick ZMR film is significantly better than that grown on a 0.3-micrometer-thick ZMR film. The weak spots for the breakdown of gate oxides are identified and correlated with defects in the ZMR films by optical Nomarski interference contrast microscopy and scanning electron microscopy. In comparison to its counterpart on bulk Si, the gate oxide grown on a 1-micrometer-thick ZMR film is characterized by a slightly lower breakdown field, larger positive charge generation, higher electron trapping, and larger interface-state generation. Reprints. (rh)