Study of Gate Oxide Leakage and Charge Trapping in ZMR (Zone-Melting-Recrystallized) and SIMOX (Oxygen-Implanted) SOI (Silicon-On-Insulator) MOSFET's

摘要

Characterization of gate oxides grown on AMR and SIMOX films indicates oxide leakage and charge trapping to be several orders of magnitude greater than their bulk silicon counterpart. Electron trapping is the primary trapping mechanism for constant current injection in the gate oxides of these SOI films. Similar type of traps are observed in ZMR and SIMOX oxides. Semiconductor films, Reprints. (JES)