Quality of Gate Oxides Grown on State-of-the-Art SIMOX and ZMR SOI Substrates.(Reannouncement with New Availability Information)

摘要

The quality of 25-nm gate oxides formed on state-of-the-art SIMOX and ZMR silicon-on-insulator (SOI) substrate was studied using NMOSFET's. Circular, edgeless. as well as conventional island isolated devices were used. Devices fabricated on bulk silicon wafers were studied for comparison. I-V characteristics, breakdown voltages, charge trapping, and charge to breakdown were characterized. SOI gate oxides in the edgeless, circular NMOSFET's exhibited the following properties which were quantitatively comparable to those of bulk silicon gate oxides: breakdown field approx. 11.5 MV /cm, barrier height for Fowler-Nordheim (F-N) tunneling = 3.6 eV, charge to breakdown approx. 10(exp.20) e/sq. cm, electron capture cross section approx. 1.5 x 2 10(exp -18), sq.cm, and trap density approx. 1.5 x 10(exp. 11)/sq cm. These results clearly demonstrated that the quality of SIMOX and ZMR wafers and especially of the top Si surface was as good as that of bulk silicon. The quality of thw gate oxides formed on island isolated was poor due to defective oxide formed on the sidewalls. Gate oxides, SIMOX and ZMR SOI Substrates, NMOSFET.