The structural and optical properties of InN nanodots grown with various VIII ratios by metal-organic chemical vapor deposition

摘要

Self-assembled InN nanodots have been prepared at 650℃ with various V/III ratios from 500 to 30 000 by metal–organic chemical vapor deposition (MOCVD). It is found that the dot density and morphological size as well as the optical properties all display drastic changes at V/III = 12000. Generally, denser and smaller InN nanodots with higher emission energy and narrower linewidth were obtained when growth was conducted at V/III ratios slightly lower than 12 000 as compared to those at higher V/III ratios. The physical properties of our MOCVD-grown InN nanodots are sensitive to the surface structure and the morphology is very similar to molecular beam epitaxially grown GaN and InN films, which may be used as a guide to optimize the InN growth.