Structural and electrical properties of InN nanowires grown by chemical vapor deposition

摘要

InN is one of the most interesting materials among all group III–V nitrides for semiconductor device and sensor applications due to its direct band gap in the infrared range, smallest effective mass and highest electron drift velocity. Although several studies on InN NW growth [1], optical [1], and electronic [2] properties have been reported in recent days, there are issues with low growth rates (a few microns per hour), nonuniform cross-sections, and large variations in the material properties. Also planar growth of InN NWs has been difficult to achieve which results expensive, and complicated device fabrication process limiting the applications of these NWs. This has motivated researchers worldwide to explore controlled growth of high quality InN NW, and simple, yet effective, device fabrication process.