首页> 外文学位 >Optical and structural properties of indium nitride epilayers grown by high-pressure chemical vapor deposition and vibrational studies of ZGP single crystal

【24h】

Optical and structural properties of indium nitride epilayers grown by high-pressure chemical vapor deposition and vibrational studies of ZGP single crystal

机译：通过高压化学气相沉积和ZGP单晶的高压化学气相沉积和振动研究生长的氮化铟外膜的光学和结构性

获取原文

获取原文并翻译 | 示例

页面导航

著录项
相似文献
相关主题

著录项

作者
Atalay, Ramazan;
展开▼
作者单位

Georgia State University;

展开▼
授予单位 Georgia State University;
学科
学位 Ph.D.
年度 2012
页码 294 p.
总页数 294
原文格式 PDF
正文语种 eng
中图分类 AAI3547069;
关键词
Chemical vapor deposition; Epilayers; Far-IR reflectance spectroscopy; Indium nitride; Raman spectroscopy; X-ray diffraction; Zinc germanium phosphide;

机译：化学气相沉积;脱果;远红外反射光谱;氮化铟;拉曼光谱;X射线衍射;磷化锌锗锗;
入库时间 2022-08-17 12:02:52

相似文献

外文文献
中文文献
专利

1. Effect of reactor pressure on the electrical and structural properties of InN epilayers grown by high-pressure chemical vapor deposition [J] . Indika Senevirathna M. K., Gamage Sampath, Atalay Ramazan, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films . 2012,第3期

机译：反应堆压力对高压化学气相沉积生长的InN外延层电学和结构性能的影响
2. Terahertz dielectric response and optical conductivity of n-type single-crystal ZnO epilayers grown by metalorganic chemical vapor deposition [J] . Zhang X. H., Guo H. C., Yong A. M., Journal of Applied Physics . 2010,第3期

机译：金属有机化学气相沉积法生长n型单晶ZnO外延层的太赫兹介电响应和光导率
3. Terahertz dielectric response and optical conductivity of n-type single-crystal ZnO epilayers grown by metalorganic chemical vapor deposition [J] . X. H. Zhang, H. C. Guo, A. M. Yong, Journal of Applied Physics . 2010,第3期

机译：金属有机化学气相沉积法生长n型单晶ZnO外延层的太赫兹介电响应和光导率
4. Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition [C] . M. Kato, S. Tanaka, M. Ichimura European Conference on Silicon Carbide and Related Materials . 2005

机译：冷壁化学气相沉积4H-SIC脱晶仪深度水平的光学电容瞬态光谱研究
5. Optical, structural, and transport properties of indium nitride, indium gallium nitride alloys grown by metalorganic chemical vapor deposition . [D] . Khan, Neelam. 2009

机译：通过金属有机化学气相沉积法生长的氮化铟，氮化铟镓合金的光学，结构和传输性能。
6. High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition [O] . Jiaming Wang, Fujun Xu, Chenguang He, -1

机译：通过金属有机化学气相沉积在氮化蓝宝石上生长的高质量AlN外延层
7. Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD) [O] . Zhu JJ, Fan YM, Zhang H, 2012

机译：GaN模板对通过有机金属化学气相沉积（MOCVD）在铟非常富集的条件下生长到AlInN外延层中的意想不到的Ga原子的贡献

Optical and structural properties of indium nitride epilayers grown by high-pressure chemical vapor deposition and vibrational studies of ZGP single crystal

著录项

相似文献

相关主题

期刊订阅