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Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)

机译：GaN模板对通过有机金属化学气相沉积（MOCVD）在铟非常富集的条件下生长到AlInN外延层中的意想不到的Ga原子的贡献

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Zhu JJ; Fan YM; Zhang H; Lu GJ; Wang H; Zhao DG; Jiang DS; Liu ZS; Zhang SM; Chen GF; Zhang BS; Yang H;
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1. Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD) [J] . J.J. Zhu, Y.M. Fan, H. Zhang, Journal of Crystal Growth . 2012,第1期

机译：GaN模板对通过有机金属化学气相沉积（MOCVD）在铟非常富集的条件下生长到AlInN外延层中的意想不到的Ga原子的贡献
2. Structural and optical properties of Al_(1-x)In_xN epilayers on GaN template grown by metalorganic chemical vapor deposition [J] . Lu Guo-Jun, Zhu Jian-Jun, Jiang De-Sheng, 中国物理：英文版 . 2010,第002期
3. Investigations of V-shaped defects and photoluminescence of thin GaN-rich GaNP layers grown on a GaN epilayer by metalorganic chemical vapor deposition [J] . H. D. Li, M. Tsukihara, Y. Naoi, Applied Physics Letters . 2004,第11期

机译：金属有机化学气相沉积在GaN外延层上生长的富GaN薄GaNP层的V形缺陷和光致发光的研究
4. We report on the novel normally-off GaN-based heterojunction field effect transistors (HFETs) on a Si substrate.The AlGaN/AIN/GaN heterostructure was grown using a metalorganic chemical vapor deposition (MOCVD).The HFET for a normally-off operation w [C] . M.Germain, M.Leys, J.Derluyn, Symposium on GaN, AIN, InN and Their Alloys . 2005

机译：我们在Si底物上报告了常常数-FaN基的异质结场效应晶体管（HFET）。使用金属化学气相沉积（MOCVD）生长AlGaN / AIN / GaN异质结构。用于常关操作的HFET W.
5. Polarity control in gallium nitride epilayers grown by Metalorganic Chemical Vapor Deposition [D] . Mita, Seiji. 2007

机译：金属化学气相沉积种植的氮化镓外膜中的极性控制
6. NO gas sensor based on ZnGa2O4 epilayer grown by metalorganic chemical vapor deposition [O] . Min-Ru Wu, Wei-Zhong Li, Chun-Yi Tung, -1

机译：金属有机化学气相沉积生长基于ZnGa2O4外延层的NO气体传感器
7. A Comparative Study of InGaN/GaN Multiple‐Quantum‐Well Solar Cells Grown on Sapphire and AlN Template by Metalorganic Chemical Vapor Deposition [O] . Makoto Miyoshi, Miki Ohta, Takuma Mori, 2017

机译：冶金化学气相沉积在蓝宝石和ALN模板上生长的Ingan / GaN多量子井太阳能电池的比较研究
8. Study of High (Tc) Superconducting Thin Films Grown by MOCVD (Metalorganic Chemical Vapor Deposition): Progress Report, July 1, 1986-September 30, 1989. [R] . Erbil, A. 1989

机译：通过mOCVD（金属有机化学气相沉积）生长的高（Tc）超导薄膜的研究：进展报告，1986年7月1日 - 1989年9月30日。

Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)

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