采用化学气相沉积法在p型硅衬底上制备具有纤锌矿结构的不同形貌的InN纳米材料,通过扫描电子显微镜和X射线衍射分析了InN纳米材料的形貌、元素组成及晶体结构,发现该材料具有纳米线、纳米叶、纳米项链3种结构,其中纳米叶是InN中的一种新型结构材料,且未见报道.能谱扫描检测确定氮铟原子质量比约为1∶1.07.在室温下光致发光谱的测试中,经计算可得InN纳米材料的带隙为0.725 eV,同时InN纳米叶的发光强度优于纳米线与纳米项链,表明新型纳米叶结构具有更优异的光学性能.%The growth of wurtzite InN nanomaterials on p-type silicon substrates was investigated by means of chemical vapor deposition,and the structure of InN nanoleaf had not been reported.Scanning electron microscopy and X-ray diffraction were used to analyze the morphology and the crystal structure of InN nano-materials.Simultaneously in order to study the composition of the sample,the energy dispersive spectro-scopy showed the atom mass ratio of In/N was 1 ∶ 1.07.Finally,the room temperature photoluminescence spectrum of the samples showed that near band gap emissions of around 0.725 eV,where the emission of InN nanoleaf compared to nanowire and nanonecklace was found to be stronger,indicating more wide application for novel InN nanoleaves respectively.
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