Proposal of a Novel Gettering Technique for a Thin SOI Wafer

摘要

A novel gettering technique for a thin silcon-on-insulator (SOI) wafer is proposed. The gettering procedure for 1- h at 600 deg C using polycrystalline silicon film is followed by protection of the device region where the film is immediately removed after the procedure from the SOI wafer. Gettering was evaluated by comparing electrical properties of devices in gettered and ungettered parts of the wafer where half of the wafer was gettered. A detectable reduction of an off-current was observed in the gettered parts. The gettering effect was supported by the reduction of the localized state density measured by the charge pumping method.