THE STUDY ON DEFECTS IN SINGLE CRYSTAL SILICON WAFERS TREATED WITH DOUBLE-GETTERING TECHNIQUE

摘要

Investigations on the nature and states of the defeats in single crystal wafers treated with double-gettering technique have been carried out by means of optical microscopy,electron microscopy,electron miaroanalysis and spread resistance.Phosphorus profile in these wafers was measured.And the effect of phosphorus on defects and resistivity was determined.