METHOD OF FABRICATING NANO-SOI WAFER HAVING PROXIMITY GETTERING ABILITY AND NANO-SOI WAFER FABRICATED BY THE SAME

摘要

The close coal mining of the present invention (neighbouring to mine) nanometer eseuoh children, have ability (SOI; Silicon on insulator) process for producing one the gettering ability of chip and substrate wafer be related to silicon wafer on a nanometer-insulator and correspondingly manufacture (in the close method of semiconductor machining, one SOI wafer of its millimicron (Nano grade) for being used to manufacture the control by oxide precipitate (open policy, oxygen precipitate), or generated during the BMD (bulk microdefect) with a heavy metal removal ability), and correspondingly form it and be related to a SOI wafer, with a nano-scale thickness to have a gettering ability. A method of reaching the high concentration to form oxide precipitate of acting in agreement with a gettering ability of the invention and reference wafer for manufacturing silicon wafer-on nanometer-insulator to prepare a bond wafer and reference wafer, remove the nitride film coupling of reference wafer, form a step of the surface polishing of reference wafer, including method: at least one party bond wafer formed an insulating film, the predetermined depth to the surface for injecting part from bond wafer hydrogen ion is combined by implantation hydrogen ion, including method: contact the polished surface and reference wafer bond wafer and reference wafer of insulating film surface together in wafer key, division part by executing the heat treatment of the foreign ion of injection bond wafer is bonded to the surface temperature Heat Treatment base-material on chip and forms single a crystal silicon and oxide layer. Furthermore, insulating film oxidation film tabletting as eseuoh children, chip and bonding step are based on growth bond wafer foreign ion surface to be formed, after the implanted layer of one reference wafer, pulley combines plantation singhu oxide impurities ion to be implanted chip and is connected to ballot Singh's reference wafer in the step that step combines the oxidation film for being connected to form in chip to be formed in foreign ion implanted component and growth oxidation film after removing oxide film dissolving. ;SOI, division, plantation, an insulating film, etching, Low Temperature Heat Treatment, low-voltage, millimicro thickness close coal mining, oxygen precipitate, open policy, BMD