Fabrication and Electrical Characteristics of a Metal-Ferroelectric-Polysilicon-Insulator- Si Field Effect Transistor

摘要

A rho-channel metal/ferroelectric/polycrystalline silicon/insulator/silicon structure field effect transistor (FET) with a Pb(Zr_(0.52)Ti_(0.48))O_3 ferroelectric layer has been proposed and demonstrated. The Pb(Zr_(0.52)Ti_(0.48))O_3 ferroelectric layer (200 nm) was deposited by radio frequency magnetron sputtering. The counterclockwise capacitance-voltage (C-V) characteristics of the capacitor and the clockwise drain current-gate voltage (I_d-V_g) characteristics of the rho-channel ferroelectric FET demonstrate that the device can realize a memory effect due to the ferroelectric polarization of the Pb(Zr_(0.52)Ti_(0.48))O_3 thin film. The size of the memory windows has been investigated. The memory widow measured from C-V and I_d-V_g curves of the device are consistent.