Numerical Simulation of the Comparative Electrical Performance of the PermeableBase Transistor, Opposed Gate-Source Transistor and Heterostructure Launched Ballistic Field Effect Transistor

摘要

Devices operate under large signal conditions. Thus large signal simulations arerequired. This is illustrated for the permeable base transistor, the heterostructure bipolar transistor and the opposed source-gate transistor. There were a number of ground-breaking results during the course of this study. The most significant is that a simulation was developed that coupled the large signal two dimensional device behavior to the large signal properties of an external circuit. The study was applied most extensively to the permeable base transistor, where it was determined that if fabrication properties could be addressed successfully, the permeable base transistor could be a significant device in terms of output power and frequency. These results are summarized in the discussion of the permeable base transistor. Studies on the heterostructure bipolar transistor confirm that the long recombination times serve to yield superior performance for the indium based HBTs. Finally, the discussion of the OGST points to its promise as a high frequency switching devices. (R.H.)