Comparative Study of p~+~+ Gate Modified Saddle Metal Oxide Semiconductor Field Effect Transistors and p~+~+ Gate Bulk Fin Field Effect Transistors for Sub-40nm Dynamic Random Access Memory Cell Transistors

摘要

We present a comparative study of p~+~+ gate modified saddle metal oxide semiconductor field effect transistors (MOSFETs) and p~+~+ gate bulk fin field effect transistors (FinFETs) that have been proposed for sub-40nm dynamic random access memory (DRAM) applications. The p~+~+ gate structure consists of polycrystalline silicon (poly-Si) with two different work functions, so that the gate-induced-drain-leakage (GIDL) current of both devices can markedly be reduced. Device characteristics were carefully investigated in terms of on/off current ratio (I_(on)/I_(off)) and subthreshold swing (SS) by changing fin body width (W_b), and we analyzed drain current-gate voltage (I-V) characteristics and electric field profiles of a 40 nm device by controlling n~+ gate length (L_s). Finally, electrical characteristics with respect to gate length (L_g) are also compared.