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FIN FIELD-EFFECT TRANSISTOR STATIC RANDOM ACCESS MEMORY DEVICES WITH P- CHANNEL METAL-OXIDESEMICONDUCTOR PASS GATE TRANSISTORS
FIN FIELD-EFFECT TRANSISTOR STATIC RANDOM ACCESS MEMORY DEVICES WITH P- CHANNEL METAL-OXIDESEMICONDUCTOR PASS GATE TRANSISTORS
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机译:带P通道金属氧化物半导体激光器通栅晶体管的FIN场效应晶体管静态随机存取存储器
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摘要
A complementary metal oxide semiconductor (CMOS) static random access memory (SRAM) cell. A CMOS SRAM cell in accordance with an aspect of the present disclosure includes a bit line and a word line. Such a CMOS SRAM memory cell further includes a CMOS memory cell having at least a first p channel device comprising a first channel material that differs from a substrate material of the CMOS memory cell the first channel material having an intrinsic channel mobility greater than the intrinsic channel mobility of the substrate material the first p channel device coupling the CMOS memory cell to the bit line and the word line.
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