Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates

摘要

We report the observation of stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on Si(001) substrates with the application of a relaxed Ge buffer layer. Stimulated emission is observed at 77 K under pulsed optical pumping at a wavelength of 1.11 mu m, i.e., in the transparency range of bulk silicon. In similar InGaAs/GaAsSb/GaAs structures grown on GaAs substrates, room-temperature stimulated emission is observed at 1.17 mu m. The results obtained are promising for integration of the structures into silicon-based optoelectronics.