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机译:从Si衬底生长的InGaAs / GaAs / Algaas异质结构的刺激发射
Russian Acad Sci Inst Phys Microstruct Nizhnii Novgorod 603950 Russia;
Lobachevsky State Univ Nizhni Novgorod Res Inst Phys &
Technol Nizhnii Novgorod 603950 Russia;
Russian Acad Sci Inst Phys Microstruct Nizhnii Novgorod 603950 Russia;
Russian Acad Sci Inst Phys Microstruct Nizhnii Novgorod 603950 Russia;
Russian Acad Sci Inst Phys Microstruct Nizhnii Novgorod 603950 Russia;
Russian Acad Sci Inst Phys Microstruct Nizhnii Novgorod 603950 Russia;
Lobachevsky State Univ Nizhni Novgorod Res Inst Phys &
Technol Nizhnii Novgorod 603950 Russia;
Lobachevsky State Univ Nizhni Novgorod Res Inst Phys &
Technol Nizhnii Novgorod 603950 Russia;
Russian Acad Sci Inst Phys Microstruct Nizhnii Novgorod 603950 Russia;
机译:从Si衬底生长的InGaAs / GaAs / Algaas异质结构的刺激发射
机译:具有双夹氨酸/盖和GaAs量子孔的异质结构的刺激发射,在GaAs和Ge / Si(001)基材上生长
机译:在Ge / Si(001)衬底上生长的量子孔,在变质InGaAs / InGaASP结构中产生的刺激发射。
机译:通过分子束外延生长在(411)A GaAs衬底上生长的伪定型调制键合N-AlGaAs / InGaAs / GaAs量子阱中的电学性质
机译:基于在结构化衬底上生长的低阈值应变InGaAs / GaAs量子阱激光器的光电器件
机译:高衬底温度下通过液滴外延生长的单个InGaAs / GaAs量子点的单光子发射
机译:调制掺杂Inalas / InGaas / Inalas和alGaas / InGaas / alGaas异质结构中的电子传输
机译:有机金属气相外延生长的alInGaas / alGaas分离限制异质结构应变单量子阱二极管激光器