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AlInGaAs/AlGaAs Separate-Confinement Heterostructure Strained Single Quantum WellDiode Lasers Grown by Organometallic Vapor Phase Epitaxy

机译：有机金属气相外延生长的alInGaas / alGaas分离限制异质结构应变单量子阱二极管激光器

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Wang, C. A.; Walpole, J. N.; Missaggia, L. J.; Donnelly, J. P.; Choi, H. K.;
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年度 1991
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总页数 4
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Laser materials; Heterojunctions; Semiconductor diodes; Organometallic compounds; Aluminum gallium arsenides; Reprints;

机译：激光材料;异质结;半导体二极管;有机金属化合物;砷化铝镓;重印;

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专利

1. Strained-layer InGaAs-GaAs-AlGaAs graded-index separate-confinement single quantum well lasers grown by molecular-beam epitaxy [J] . Offsey S.D., Schaff W.J. IEEE Transactions on Electron Devices . 1989,第11期

机译：分子束外延生长的应变层InGaAs-GaAs-AlGaAs梯度折射率分离约束单量子阱激光器
2. AlInGaAs/AlGaAs strained quantum-well ridge waveguide lasers grown by metalorganic chemical vapor deposition [J] . Hughes N.A., Connolly J.C. IEEE Photonics Technology Letters . 1992,第2期

机译：通过金属有机化学气相沉积法生长的AlInGaAs / AlGaAs应变量子阱脊形波导激光器
3. Organometallic vapor phase epitaxy of high-performance strained-layer InGaAs-AlGaAs diode lasers [J] . Wang C.A., Choi H.K. IEEE Journal of Quantum Electronics . 1991,第3期

机译：高性能应变层InGaAs-AlGaAs二极管激光器的有机金属气相外延
4. Optical and microwave performance of GaAs-AlGaAs and strained-layer InGaAs-GaAs-AlGaAs graded-index separate-confinement heterostructure single quantum well lasers [C] . Offsey, S.D., Schaff, . 1989

机译：GaAs-AlGaAs和应变层InGaAs-GaAs-AlGaAs梯度折射率分离约束异质结构单量子阱激光器的光学和微波性能
5. Indium gallium arsenide phosphide/indium phosphide 1.3 micron double heterostructure laser grown on silicon substrate by metalorganic vapor phase epitaxy [D] . Mobarhan, Kamran S. 1994

机译：金属有机气相外延在硅衬底上生长砷化铟镓磷化物/磷化铟1.3微米双异质结构激光器
6. Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy [O] . M Henini 2006

机译：分子束外延生长量子点异质结构的性质及应用
7. Strained In1-xGaxAsyP1-y/InP quantum well heterostructures grown by low-pressure metalorganic vapor phase epitaxy [O] . Carvalho Jr, Wilson de, Bernussi, Ayrton André, Furtado, Mário Tosi, 2015

机译：低压金属有机气相外延生长的应变In1-xGaxAsyP1-y / InP量子阱异质结构
8. Organometallic Vapor Phase Epitaxy of High-Performance Strained-Layer InGaAs-AlGaAs Diode Lasers [R] . Wang, C. A., Choi, H. K. 1991

机译：高性能应变层InGaas-alGaas二极管激光器的有机金属气相外延

AlInGaAs/AlGaAs Separate-Confinement Heterostructure Strained Single Quantum WellDiode Lasers Grown by Organometallic Vapor Phase Epitaxy

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