Hole Mobility Enhancement in Strained SiGe Grown onSilicon-on-Insulator p-MOSFETs

摘要

The hole mobility of p-metal-oxide-semiconductor field-effect transistors (MOSFETs) with acompressively-strained SiGe channel grown on a silicon-on-insulator (SOI) structure was investi-gated. In particular, the dependence of the mobility behavior on the effective field (E_(eff))wasinvestigated by varying the Ge concentration in the SiGe layer. We observed that the mobility en-hancement factor increased with both the Ge concentration and the E_(eff).In addition, we confirmedthat the hole mobility enhancement factor caused by the compressively-strained SiGe channel grownon a SOI structure persisted in the higher E_(eff)range and that it was higher than of the siliconchannel structure. This was due to the fact that the strain and the confinement effects both workto maintain a constant energetic splitting between the heavy hole and the light hole bands.