Enhanced Hole Mobility in High Ge Content Asymmetrically Strained-SiGe p-MOSFETs

摘要

The hole mobility characteristics of $langle hbox{110}rangle$ /(100)-oriented asymmetrically strained-SiGe p-MOSFETs are studied. Uniaxial mechanical strain is applied to biaxial compressive strained devices and the relative change in effective hole mobility is measured. The channel Ge content varies from 0 to 100%. Up to $-$2.6% biaxial compressive strain is present in the channel and an additive uniaxial strain component of $-$0.06% is applied via mechanical bending. The hole mobility in biaxial compressive strained-SiGe is enhanced relative to relaxed Si. It is observed that this mobility enhancement increases further with the application of $langle hbox{110}rangle$ longitudinal uniaxial compressive strain. The relative change in mobility with applied stress is larger for biaxial compressive strained-SiGe than for Si and increases with the amount of biaxial compressive strain present in the channel.