Influence of swift heavy ion irradiation on electrical characteristics of Au-Si (100) Schottky barrier structure

摘要

The influence of swift heavy (180 MeV Ag-107(14+)) ion irradiation on Au-Si Schottky diode characteristics has been analysed using in situ current-voltage (I-V) characterization. The values of the Schottky barrier height (SBH), the ideality factor and series resistance R-s for each irradiation fluence have been obtained from the forward bias I-V characteristics. For an unirradiated diode, the SBH and ideality factor were 0.74 +/- 0.01 eV and 1.71, respectively. The barrier height decreases to 0.69 +/- 0.01 eV as the fluence increases to a value of 1 x 10(11) ions cm(-2). It is found that after an irradiation fluence of 1 x 10(11) ions cm(-2) the SBH remains immune to further irradiation up to a fluence of 5 x 10(12) ions cm(-2). The observed behaviour is interpreted on the basis of energy loss mechanisms of energetic ions at the metal-semiconductor interface and irradiation- induced defects.