Silicon carbide-barrier layer-schottky diode, has trenches provided in region of silicon carbide layer with depth and in distance so that electrical field intensity at schottky-transition-boundary surface is equal to specific value or small

摘要

The diode has a silicon carbide layer including a region i.e. n -drift layer (2), of a conductive type with a dopant concentration that is smaller than a n +silicon carbide substrate (1), and another region i.e. part of side wall of trenches (7), of another conductive type designed in a semiconductor region (4) of a p-type. The trenches are provided in the latter region with a depth and in a distance (Lsbd) so that an electrical field intensity at a schottky-transition-boundary surface is equal to 0.1 megavolts per cm or small during applying a reverse voltage. The drift layer includes a surface with a defect density that is defined by etch pits, which are formed during etching with molten potassium hydroxide.