Temperature-dependent barrier characteristics of swift heavy ion irradiated Au-Si Schottky structure

摘要

The electrical behavior of Au-Si(100) structure, irradiated with 120 MeV ~(107)Ag~(8+), has been investigated in a wide temperature range (50-300 K). The forward bias current-voltage (Ⅰ-Ⅴ) and reverse bias capacitance-voltage (C-V) measurements have been used to extract the diode parameters. The variations in various parameters of the irradiated Schottky structure have been systematically studied as a function of temperature. It is found that the flatband barrier height is almost independent of the change in temperature. The ionized-donor concentration decreases while the ideality factor increases with decreasing temperatures. The behavior of Schottky parameters is explained by taking into account the role of the swift heavy ion irradiation induced defects at metal-semiconductor junction. The results are interpreted on the basis of recent models of Fermi level pinning.