Effects of Interface Structure on the Electrical Characteristics of PtSi-Si Schottky Barrier Contacts.

摘要

The properties of PtSi-Si Schottky barrier contacts formed by a new technique employing multilayer metallization are compared with those of contacts prepared by the conventional single-layer metallization method. The multilayer technique permits the formation of very shallow contacts without any limitation being placed on the thickness of the PtSi layer. For a PtSi layer of given thickness the PtSi-Si contact interface obtained by this technique is more than the interface formed by a annealing a single layer of platinum on silicon. The interfacial uniformity is independent of PtSi thickness for shallow PtSi-Si contacts produced by the multilayer technique, while for conventional contacts the uniformity decreases with increasing PtSi thickness. These diodes exhibit near-ideal forward current-voltage characteristics, low reverse leakage current (less than 5 nA at -10V) and high breakdown voltages (over -90V). These characteristics are superior to those of diodes using conventional PtSi-Si contacts.