Photoelectric characteristics of PtSi-Si Schottky barrier with boron heavily-doped nanolayer

摘要

The photoelectric characteristics of Schottky barriers, created by recoil implantation in silicon, are analyzed. Implantation of boron atoms in silicon samples was made by recoil method, inducing Al ion beams bombardment, with current density 4-10 A/cm~2 and 30-150 keV energy. A SIMS analysis of obtained structures and calculation of their electric parameters show the opportunity of conducting layers formation, with a thickness of 10 nm and carrier concentration higher than 10~(18) cm~(-3)..