Swift heavy ion irradiation-induced defects and electrical characteristics of Au-Si Schottky structure

摘要

The formation and evolution of defects induced by 100 MeV Si7+ ion irradiation in the Au-Si (1 0 0) Schottky barrier structure were studied and correlated with the electrical characteristics of the structure. The Schottky barrier decreases to 0.67 +/- 0.01 eV after irradiation at a fluence of 1 x 10(11) ions cm(-2) and remains immune to further irradiation up to a fluence of 1 x 10(12) ions cm(-2). A combination of in situ deEP 10level transient spectroscopy and current-voltage measurements of Au-Si diodes demonstrates that 100 MeV silicon ion irradiation introduces a hydrogen related defect complex, which has a major influence on the Schottky barrier height and the leakage current in the irradiated structure.