Pd ohmic contacts to p-SiC 4H, 6H, and 15R polytypes

摘要

A new metallization process at sample temperatures up to 600℃ during deposition of the metals is employed for producing low resistivity narrow Pd ohmic contacts to p-SiC epitaxial layers of 4H, 6H and 15R poly-types. It is found that the valuesof the specific contact resistances were equal for the same Na-Nd concentration in all investigated poly-types. On epitaxial layers with Na-Nd =4×10{sup}18 cm{sup}-3 a specific contact resistance of 4×10{sup}-4Ω cm{sup}2 has been measured. Electricaland structural features of these contacts were investigated.