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2015 IEEE Compound Semiconductor Integrated Circuit Symposium
2015 IEEE Compound Semiconductor Integrated Circuit Symposium
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1.
A 140-180-GHz Broadband Amplifier with 7 dBm OP1dB and 400 GHz GBW in SiGe BiCMOS
机译:
SiGe BiCMOS中具有7 dBm OP1dB和400 GHz GBW的140-180-GHz宽带放大器
作者:
Furqan Muhammad
;
Ahmed Faisal
;
Rucker Holger
;
Stelzer Andreas
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
BiCMOS integrated circuits;
Ge-Si alloys;
millimetre wave amplifiers;
wideband amplifiers;
GBW;
SiGe;
SiGe BiCMOS technology;
bandwidth 46 GHz;
bandwidth T-type input;
broadband amplifier;
frequency 140 GHz to 180 GHz;
frequency 400 GHz;
fully differential cascode topology;
gain-bandwidth product;
output matching networks;
power 132 mW;
size 0.13 mum;
Bandwidth;
Broadband communication;
Frequency measurement;
Gain;
Power generation;
Power measurement;
Silicon germanium;
2.
A 15Gb/s AC-Coupled VCSEL Driver with Waveform Shaping in 65nm CMOS
机译:
具有65nm CMOS波形整形的15Gb / s交流耦合VCSEL驱动器
作者:
Kozlov Victor
;
Carusone Anthony Chan
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
CMOS integrated circuits;
coupled circuits;
driver circuits;
optical modulation;
surface emitting lasers;
waveform analysis;
AC-coupled VCSEL driver;
CMOS waveform-shaping driver;
OMA;
on-die AC-coupling;
optical modulation amplitude;
power dissipation;
programmable DC biasing;
size 65 nm;
vertical cavity surface emitting laser;
CMOS integrated circuits;
Capacitors;
Couplings;
Modulation;
Optical attenuators;
Optical transmitters;
Vertical cavity surface emitting lasers;
3.
A 4.2-W 10-GHz GaN MMIC Doherty Power Amplifier
机译:
一个4.2W 10GHz GaN MMIC Doherty功率放大器
作者:
Coffey Mike
;
MomenRoodaki Parisa
;
Zai Andrew
;
Popovic Zoya
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
III-V semiconductors;
MMIC power amplifiers;
gallium compounds;
silicon compounds;
wide band gap semiconductors;
GaN;
OQPSK signal;
SiC;
X-band GaN MMIC Doherty power amplifier;
X-band GaN monolithic microwave integrated circuit DPA;
efficiency 31 percent;
efficiency 41 percent;
efficiency 47 percent;
frequency 10 GHz;
gate length GaN on SiC process;
output power back-off;
power 4.2 W;
size 0.15 mum;
supply modulation;
Gain;
Gallium nitride;
MMICs;
Microwave circuits;
Power generation;
4.
A 56-Gb/s Wireline Transceiver in 20nm CMOS
机译:
采用20nm CMOS的56Gb / s有线收发器
作者:
Shibasaki Takayuki
;
Yanfei Chen
;
Yoshiyasu Doi
;
Takauchi Hideki
;
Mori Toshihiko
;
Koyanagi Yoichi
;
Tamura Hirotaka
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
CMOS integrated circuits;
decision feedback equalisers;
phase detectors;
transceivers;
CMOS transceiver;
CMOS-inverter-based transmitter;
baud-rate clock recovery;
bit error rate;
bit rate 56 Gbit/s;
continuous-time linear equalizer;
phase detection;
power 177 mW;
size 0.27 mm;
size 20 nm;
speculative decision-feedback equalizer;
voltage 0.9 V;
wireline transceiver;
CMOS integrated circuits;
Clocks;
Decision feedback equalizers;
Phase detection;
Receivers;
Transceivers;
5.
Sub-Micron Thermal Imaging Characterization of GaN HEMT and MMIC Devices
机译:
GaN HEMT和MMIC器件的亚微米热成像表征
作者:
Yazawa Kazuaki
;
Kendig Dustin
;
Shakouri Ali
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
HEMT circuits;
III-V semiconductors;
MMIC;
gallium compounds;
infrared imaging;
thermoreflectance;
GaN;
GaN HEMT devices;
MMIC;
RF transistors;
advanced semiconductor devices;
geometrical complexity;
integrated devices;
microwave devices;
multi surface optical properties;
sub-micron spatial resolution;
thermal expansion;
thermal imaging;
thermal spatial drift;
thermoreflectance imaging;
Gallium nitride;
HEMTs;
Heating;
Optical imaging;
Optical reflection;
Spatial resolution;
6.
A New Active Quasi-Circulator Structure with High Isolation for 77-GHz Automotive FMCW Radar Systems in SiGe Technology
机译:
SiGe技术中用于77 GHz汽车FMCW雷达系统的高隔离度新型有源准循环器结构
作者:
Porranzl Matthias
;
Wagner Christoph
;
Jaeger Herbert
;
Stelzer Andreas
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
CW radar;
FM radar;
Ge-Si alloys;
heterojunction bipolar transistors;
millimetre wave circulators;
millimetre wave transistors;
radar antennas;
road vehicle radar;
semiconductor device measurement;
tuning;
RX-path;
SiGe;
TX-RX isolation;
TX-path;
W-band impedance tuner;
active quasi-circulator structure;
antenna mismatch;
automotive FMCW radar systems;
frequency 200 GHz;
frequency 65 GHz to 85 GHz;
frequency ramp;
insertion loss;
monostatic FMCW radars;
on-wafer measurements;
receive signal;
silicon-germanium HBT techno;
7.
Submillimeter-Wave Amplifier Circuits Based on Thin Film Microstrip Line Front-Side Technology
机译:
基于薄膜微带线前端技术的亚毫米波放大电路
作者:
Tessmann A.
;
Leuther A.
;
Ohlrogge M.
;
Massler H.
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
MMIC amplifiers;
S-parameters;
high electron mobility transistors;
microstrip lines;
submillimetre wave amplifiers;
S-MMIC amplifiers;
S-parameters;
bandwidth 500 GHz to 750 GHz;
compact submillimeter-wave monolithic integrated circuit;
eight-stage amplifier circuit;
gain 15.6 dB;
gain 23.1 dB;
mHEMT;
metamorphic high electron mobility transistors;
on-wafer calibration standards;
size 20 nm;
size 35 nm;
small-signal model;
submillimeter-wave amplifier circuits;
thin film microstrip line front-side technology;
trans;
8.
28 GHz >250 mW CMOS Power Amplifier Using Multigate-Cell Design
机译:
采用多栅极单元设计的28 GHz> 250 mW CMOS功率放大器
作者:
Jayamon Jefy A.
;
Buckwalter James F.
;
Asbeck Peter M.
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
CMOS integrated circuits;
millimetre wave power amplifiers;
silicon-on-insulator;
CMOS SOI technology;
FET stacking;
efficiency 29 percent;
external gate capacitances;
frequency 25 GHz to 35 GHz;
frequency 28 GHz;
metal stack;
mm-wave power amplifier IC;
multigate-cell technique;
size 1.2 mum;
size 307 mum;
size 45 nm;
transistor stacking;
unit cells;
CMOS integrated circuits;
CMOS technology;
Capacitors;
Field effect transistors;
Logic gates;
Power amplifiers;
9.
VO2 Switches for Millimeter and Submillimeter-Wave Applications
机译:
用于毫米波和亚毫米波应用的VO2开关
作者:
Hillman C.
;
Stupar P.A.
;
Griffith Z.
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
S-parameters;
millimetre wave devices;
submillimetre wave devices;
switches;
vanadium compounds;
S-parameter uniformity;
VOsub2/sub;
electronically scanned phased array;
frequency 220 GHz;
insertion loss;
loss 1.3 dB;
millimeter-wave SPST switch;
single-pole single-throw series;
submillimeter-wave application;
terahertz frequency;
vanadium dioxide switch;
Capacitance;
Contacts;
Geometry;
Heating;
Insertion loss;
Radio frequency;
Scattering parameters;
10.
Silicon Photonic Microring Resonator-Based Transceivers for Compact WDM Optical Interconnects
机译:
基于硅光子微环谐振器的收发器,用于紧凑型WDM光学互连
作者:
Palermo Samuel
;
Chiang Patrick
;
Cheng Li
;
Chin-Hui Chen
;
Fiorentino Marco
;
Beausoleil Ray
;
Hao Li
;
Kunzhi Yu
;
Binhao Wang
;
Rui Bai
;
Shafik Ayman
;
Titriku Alex
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
elemental semiconductors;
integrated optics;
micro-optics;
microcavities;
micromechanical resonators;
optical interconnections;
optical modulation;
optical transceivers;
silicon;
wavelength division multiplexing;
PAM4 modulation;
WDM optical interconnects;
bit rate 50 Gbit/s;
drop filters;
modulators;
optical transceivers;
photonic devices;
photonic microring resonator-based transceivers;
ring resonator optical interconnect platform;
transceiver circuits;
wavelength-division multiplexing;
Modulation;
Optical filters;
11.
Grating-Induced Frequency Multiplication in Planar Gunn Diodes
机译:
平面耿氏二极管中的光栅诱导倍频
作者:
Smith Don D.
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
Gunn diodes;
III-V semiconductors;
diffraction gratings;
indium compounds;
oscillations;
InP;
LSA mode;
Smith-Purcell mode;
bulk planar InP Gunn diode devices;
doping concentration;
frequency 100 GHz to 300 GHz;
grating mode oscillation;
integrated metallic gratings;
limited-space-charge accumulation mode;
low-doped mode;
oscillation mode;
transit frequency;
transit mode;
Gratings;
Harmonic analysis;
III-V semiconductor materials;
Indium phosphide;
Oscillators;
Semiconductor diodes;
Standards;
12.
Advances in InP HEMT WR1.5 Amplifier MMICs
机译:
InP HEMT WR1.5放大器MMIC的进展
作者:
Zamora A.
;
Mei X.B.
;
Leong K.M.K.H.
;
Lange M.
;
Lee J.
;
Yoshida W.
;
Gorospe B.S.
;
Deal W.R.
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
III-V semiconductors;
MMIC amplifiers;
high electron mobility transistors;
indium compounds;
InP;
InP HEMT WR1.5 amplifier MMIC;
WR1.5 band;
comparable gain numbers;
device peripheries;
four amplifier designs;
on-wafer measured data;
Coplanar waveguides;
Gain;
HEMTs;
III-V semiconductor materials;
Indium phosphide;
MMICs;
Substrates;
13.
A 240GHz Synthesizer in 55nm SiGe BiCMOS
机译:
采用55nm SiGe BiCMOS的240GHz合成器
作者:
Shopov Stefan
;
Hasch Juergen
;
Chevalier Pascal
;
Cathelin Andreia
;
Voinigescu Sorin P.
会议名称:
《》
|
2015年
关键词:
BiCMOS analogue integrated circuits;
Ge-Si alloys;
millimetre wave integrated circuits;
millimetre wave oscillators;
phase noise;
varactors;
voltage-controlled oscillators;
AMOS varactors;
BiCMOS process;
SiGe;
VCO;
broadband LO tree;
frequency 120 GHz;
frequency 234 GHz to 261 GHz;
frequency 330 GHz;
frequency 350 GHz;
phase noise;
power 467 mW;
power consumption;
size 55 nm;
synthesizer;
voltage 1.2 V;
voltage 1.8 V;
voltage 2.5 V;
voltage-controlled oscillators;
Frequency measurement;
Phase noise;
Power generation;
Powe;
14.
A X-Band Reconfigurable Phased Array Antenna System Using 0.13-µm SiGe BiCMOS IC with 5-Bit IF Phase Shifters
机译:
X波段可重配置相控阵天线系统,该系统使用带有5位IF移相器的0.13 µm SiGe BiCMOS IC
作者:
Oshima Naoki
;
Ando Ikuma
;
Kitagishi Youichi
;
Matsumura Eiichi
;
Kameda Suguru
;
Suematsu Noriharu
;
Kunihiro Kazuaki
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
BiCMOS integrated circuits;
Ge-Si alloys;
antenna phased arrays;
antenna radiation patterns;
microwave antenna arrays;
microwave phase shifters;
printed circuits;
64-QAM OFDM signal;
IF phase shifters;
PCB integrated tile module;
SiGe;
X-band reconfigurable active phased array antenna system;
beamforming pattern;
flip-chipped phased array 0.13-μm SiGe BiCMOS IC;
interconnected tile modules;
scalable phased array;
size 0.13 mum;
word length 5 bit;
Arrays;
Integrated circuits;
OFDM;
Phase shifters;
Phased arrays;
Radio;
15.
Compact Model Validation Strategies Based on Dedicated and Benchmark Circuit Blocks for the mm-Wave Frequency Range
机译:
基于专用和基准电路模块的毫米波频率范围的紧凑模型验证策略
作者:
Ardouin B.
;
Schroter M.
;
Zimmer T.
;
Aufinger K.
;
Pfeiffer U.
;
Raya C.
;
Mukherjee A.
;
Malz S.
;
Fregonese S.
;
DEsposito R.
;
De Matos M.
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
integrated circuit design;
millimetre wave integrated circuits;
benchmark circuit blocks;
compact model validation strategies;
dedicated circuit blocks;
frequency 220 GHz;
mm-wave frequency range;
model qualification;
validation circuits;
Current density;
Frequency measurement;
Integrated circuit modeling;
Semiconductor process modeling;
Transistors;
Transmission line measurements;
16.
59-dBOmega 68-GHz Variable Gain-Bandwidth Differential Linear TIA in 0.7-µm InP DHBT for 400-Gb/s Optical Communication Systems
机译:
用于400-Gb / s光通信系统的0.7-μmInP DHBT中的59-dBOmega 68-GHz可变增益带宽差分线性TIA
作者:
Dupuy Jean-Yves
;
Jorge Filipe
;
Riet Muriel
;
Nodjiadjim Virginie
;
Aubry Herve
;
Konczykowska Agnieszka
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
III-V semiconductors;
amplitude shift keying;
heterojunction bipolar transistors;
indium compounds;
operational amplifiers;
optical communication;
optical receivers;
InP;
InP DHBT;
OOK;
bandwidth 30 GHz;
bandwidth 68 GHz;
bit rate 1 Tbit/s;
bit rate 400 Gbit/s;
double heterojunction bipolar transistor;
eye diagrams;
gain 20 dB;
high-symbol-rate photoreceivers;
indium phosphide;
on-off-keying;
optical communication systems;
output-referred compression single-ended amplitude;
resistance 900 ohm;
size 0.7 mum;
transimpeda;
17.
Challenges Solutions for High Volume Production in SiGe BICMOS CMOS Technologies for High-Frequency and Optical Communications
机译:
SiGe BICMOS和用于高频和光通信的CMOS技术中大批量生产的挑战与解决方案
作者:
Galy Philippe
;
Chevalier Pascal
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
BiCMOS integrated circuits;
Ge-Si alloys;
Internet of Things;
MOSFET;
electronic equipment manufacture;
electrostatic discharge;
heterojunction bipolar transistors;
integrated circuit design;
integrated circuit manufacture;
low-power electronics;
mobile radio;
optical communication equipment;
silicon-on-insulator;
ESD;
IoT;
MOS transistors;
SiGe;
SiGe BICMOS technologies;
SiGe HBT BiCMOS55;
UTBB FDSOI technologies;
WLC;
active devices;
data transfer;
electrostatic discharge;
high volume production;
high-frequency commun;
18.
European Frontiers in RF GaN
机译:
RF GaN的欧洲前沿
作者:
van Vliet Frank E.
;
de Hek Peter
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
III-V semiconductors;
gallium compounds;
microwave power amplifiers;
radiofrequency amplifiers;
wide band gap semiconductors;
EDA;
ESA;
European Defence Agency;
European Space Agency;
European frontiers;
GaN;
HPA;
high power amplifier;
Conferences;
Europe;
Gallium nitride;
HEMTs;
Power amplifiers;
Power generation;
Wide band gap semiconductors;
19.
A Wideband 25-35GHz 5-Bit Low Power 2X2 CMOS Beam Forming Network IC for Reconfigurable Phased Arrays
机译:
用于可重构相控阵的宽带25-35GHz 5位低功耗2X2 CMOS波束形成网络IC
作者:
Daftari Naveen
;
Gilreath Leland
;
Smith Andrew D.
;
Thai Minh
;
Thai Khanh
;
Watanabe Monte
;
Yi-Cheng Wu
;
Jackson Charlie
;
Danial Ashley
;
Scherrer Dan
;
LaRocca Tim
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
CMOS integrated circuits;
field effect MIMIC;
intelligent control;
low-power electronics;
mean square error methods;
phase control;
shift registers;
wideband amplifiers;
RF signal power;
addressable shift register core;
adjacent III-V based chips;
amplifier power gating;
amplitude control;
frequency 25 GHz to 35 GHz;
intelligent control;
low-power calibration;
low-power modes;
measured RMS amplitude;
phase control;
phase error;
power 45 mW;
reconfigurable phased arrays;
reconfigurable wideband mm-wave CMOS;
wideband a;
20.
Development of Silicon Photonic Products for Telecom Datacom
机译:
电信和数据通信用硅光子产品的开发
作者:
Poulin Michel
;
Latrasse Christine
;
Picard Marie-Josee
;
Painchaud Yves
;
Pelletier Francois
;
Guy Martin
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
data communication;
optical communication;
optical modulation;
optical receivers;
silicon;
Si;
TeraXion;
coherent receivers;
datacom;
intensity modulators;
silicon photonic products;
telecom;
Couplings;
Modulation;
Optical fiber polarization;
Receivers;
Signal to noise ratio;
Silicon;
21.
High Efficiency GaN HEMT Power Amplifier/Rectifier Module Design Using Time Reversal Duality
机译:
使用时间反转对偶的高效GaN HEMT功率放大器/整流器模块设计
作者:
Honjo Kazuhiko
;
Ishikawa Ryo
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
HEMT circuits;
III-V semiconductors;
duality (mathematics);
gallium compounds;
microwave power amplifiers;
rectifiers;
DC-DC conversion efficiency;
GaN;
PWM technique;
efficiency 47 percent;
efficiency 78 percent;
efficiency 82 percent;
frequency 5.4 GHz;
harmonic reactive load type GaN-HEMT power amplifier;
high efficiency microwave power amplifiers;
high efficiency rectifiers;
power 90 mW to 860 mW;
pulse-width modulation technique;
time reversal duality concept;
time reversed dual rectifier;
HEMTs;
Microwave ampl;
22.
A SiGe-Based D-Band Fundamental-Wave VCO with 9 dBm Output Power and -185 dBc/Hz FoMT
机译:
具有9 dBm输出功率和-185 dBc / Hz FoMT的基于SiGe的D波段基波VCO
作者:
Ahmed Faisal
;
Furqan Muhammad
;
Heinemann Bernd
;
Stelzer Andreas
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
BiCMOS integrated circuits;
Ge-Si alloys;
millimetre wave oscillators;
phase noise;
voltage-controlled oscillators;
BiCMOS technology;
Colpitts topology;
D-band fundamental-wave voltage controlled oscillator;
DC power;
SiGe;
frequency 1 MHz;
frequency 147 GHz to 159 GHz;
frequency 300 GHz;
fully-differential fundamental-wave VCO;
on-wafer measurement;
oscillation frequency;
phase noise;
power 132 mW;
power 164 mW;
size 0.13 mum;
voltage 3.3 V;
Phase noise;
Power generation;
Silicon germanium;
Tuning;
Voltage measurement;
23.
MIT Virtual Source RF Model as a Tool for GaN-Based LNA and Oscillator Design
机译:
MIT虚拟源RF模型作为基于GaN的LNA和振荡器设计的工具
作者:
Radhakrishna Ujwal
;
Pilsoon Choi
;
Li-Shuan Peh
;
Antoniadis Dimitri
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
III-V semiconductors;
S-parameters;
frequency response;
gallium compounds;
high electron mobility transistors;
low noise amplifiers;
oscillators;
phase noise;
radiofrequency amplifiers;
semiconductor device models;
semiconductor device noise;
wide band gap semiconductors;
1/f noise;
GaN;
HEMT;
ISF;
LNA;
MIT virtual source RF model;
MVSG model;
RF low noise amplifier;
RF-circuit element;
S-parameter;
antenna switch;
carrier charge;
device-flicker;
device-level noise;
frequency 1.4 GHz;
frequency 5.9 GHz;
frequency response;
24.
Multi-Level Chireix Outphasing GaN MMIC PA
机译:
多级Chireix异相GaN MMIC PA
作者:
Litchfield Michael
;
Popovic Zoya
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
III-V semiconductors;
MMIC power amplifiers;
gallium compounds;
power combiners;
Chireix combiner;
GaN;
GaN MMIC Chireix outphasing PA;
ML-CO;
PAR QPSK signal;
class-F harmonic terminations;
discrete supply modulation;
efficiency 48 percent;
frequency 9.7 GHz;
fundamental frequency load modulation;
multilevel Chireix outphasing;
power 5 W;
Harmonic analysis;
MMICs;
Phase shift keying;
Power generation;
Radio frequency;
Trajectory;
25.
Multilayer Silicon Nitride-on-Silicon Integrated Photonic Platforms
机译:
多层氮化硅硅集成光子平台
作者:
Poon Joyce K. S.
;
Sacher Wesley D.
;
Ying Huang
;
Guo-Qiang Lo
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
integrated optics;
packaging;
refractive index;
silicon compounds;
SiN-Si;
multilayer integrated photonic platforms;
packaging processes;
passive photonic components;
refractive index;
telecommunication wavelength bands;
thermo-optic coefficient;
wafer-scale silicon foundry fabrication;
Couplers;
Gratings;
Optical losses;
Optical waveguides;
Photonics;
Silicon;
Silicon compounds;
26.
A 9-81/38-189 GHz Dual-Band Switchable Dynamic Frequency Divider
机译:
9-81 / 38-189 GHz双频段可切换动态分频器
作者:
Al-Eryani Jidan
;
Knapp Herbert
;
Hao Li
;
Aufinger Klaus
;
Wursthorn Jonas
;
Majied Soran
;
Maurer Linus
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
BiCMOS analogue integrated circuits;
Ge-Si alloys;
buffer circuits;
frequency dividers;
integrated circuit measurement;
microwave frequency convertors;
millimetre wave integrated circuits;
p-i-n diodes;
switching networks;
BiCMOS technology;
PIN diodes;
SiGe;
divide-by-2 dynamic frequency divider;
dual-band switchable dynamic frequency divider;
first band switching dynamic divider;
frequency 250 GHz;
frequency 38 GHz to 189 GHz;
frequency 9 GHz to 81 GHz;
regenerative frequency division principle;
size 130 nm;
Freq;
27.
Indium Phosphide Based IQ-Modulators for Coherent Pluggable Optical Transceivers
机译:
用于相干可插拔光收发器的基于磷化铟的IQ调制器
作者:
Rouvalis Efthymios
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
III-V semiconductors;
electro-optical modulation;
indium compounds;
optical transceivers;
power consumption;
100G/200G coherent transceivers;
IQ-modulators;
InP;
electro-optic Mach-Zehnder modulator technology;
electro-optic bandwidth;
insertion loss;
optical transceivers;
power consumption;
III-V semiconductor materials;
Indium phosphide;
Optical modulation;
Optical transmitters;
Transceivers;
Wavelength measurement;
28.
190-260GHz High-Power, Broadband PA's in 250nm InP HBT
机译:
250nm InP HBT中的190-260GHz高功率宽带PA
作者:
Griffith Zach
;
Urteaga Miguel
;
Rowell Petra
;
Pierson Richard
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
III-V semiconductors;
heterojunction bipolar transistors;
indium compounds;
millimetre wave power amplifiers;
wideband amplifiers;
InP;
InP HBT technology;
MMIC gain;
PA bandwidth;
broadband power combiners;
cascode-cell PA topology;
frequency 190 GHz to 260 GHz;
loss 0.5 dB;
power 208 mW;
power 220 mW;
power 47 mW to 80 mW;
size 250 nm;
solid-state power amplifiers;
thin-film microstrip;
Bandwidth;
Gain;
Heterojunction bipolar transistors;
III-V semiconductor materials;
Indium phosphide;
Power amplifiers;
Radio frequen;
29.
Plasma Mode HEMTs with RTD Gate and Multiple 2DEG Channels for Stable Terahertz Operation
机译:
具有RTD门和多个2DEG通道的等离子模式HEMT,用于稳定的太赫兹操作
作者:
Volakis John L.
;
Bhardwaj Shubhendu
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
high electron mobility transistors;
plasma waves;
2DEG channels;
HEMT;
Maxwell-hydrodynamic solver;
RTD gate;
high electron mobility transistor;
plasma wave instability;
plasma wave model;
transmission spectra;
HEMTs;
Logic gates;
MODFETs;
Mathematical model;
Numerical models;
Plasma waves;
Plasmas;
30.
Surface-Potential-Based RF Large Signal Model for Gallium Nitride HEMTs
机译:
氮化镓HEMT的基于表面电势的RF大信号模型
作者:
Khandelwal S.
;
Ghosh S.
;
Chauhan Y.S.
;
Iniguez B.
;
Fjeldly T.A.
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
III-V semiconductors;
gallium compounds;
high electron mobility transistors;
semiconductor device models;
semiconductor quantum wells;
surface potential;
wide band gap semiconductors;
GaN;
HEMT;
Verilog-A;
advance SPICE model;
large signal RF compact model;
surface potential based RF large signal model;
triangular quantum well;
Data models;
Gallium nitride;
HEMTs;
Integrated circuit modeling;
MODFETs;
Mathematical model;
Radio frequency;
31.
A Study of GaN HEMTs Current Collapse Impacts on Doherty Multistage PA Linearity
机译:
GaN HEMTs电流崩塌对Doherty多级PA线性度影响的研究
作者:
Murao Yoji
;
Hayakawa Makoto
;
Ohgami Kazuya
;
Kaneko Tomoya
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
III-V semiconductors;
UHF power amplifiers;
gallium compounds;
high electron mobility transistors;
AM-AM deviation;
GaN;
GaN HEMT;
LTE carrier;
commercially available RF predistorter IC;
current collapse;
efficiency 38 percent;
frequency 1.8 GHz;
frequency 20 MHz;
multistage GaN Doherty PA;
operating class;
power 2 W;
Gallium nitride;
HEMTs;
Linearity;
Logic gates;
MODFETs;
Power amplifiers;
32.
W- and G-Band Solid State Power Combining
机译:
W和G波段固态功率组合
作者:
Brown Kenneth W.
;
Gritters Darin M.
;
Kazemi Hooman
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
MMIC power amplifiers;
gallium compounds;
millimetre wave power amplifiers;
wide band gap semiconductors;
G-band solid state power combining;
GaN;
W-band solid state power combining;
mmW MMIC amplifiers;
mmW power combined amplifiers;
on-die power combining losses;
output power;
power 1 W;
power added efficiency;
spatial power combining;
transistor size;
unprecedented gain;
Frequency measurement;
Gallium nitride;
MMICs;
Power amplifiers;
Power generation;
Transistors;
33.
High-Gain AlGaN/GaN HEMT Single Chip E-Band Power Amplifier MMIC with 30 dBm Output Power
机译:
输出功率为30 dBm的高增益AlGaN / GaN HEMT单芯片E波段功率放大器MMIC
作者:
Ture Erdin
;
Schwantuschke Dirk
;
Tessmann Axel
;
Wagner Sandrine
;
Bruckner Peter
;
Mikulla Michael
;
Quay Rudiger
;
Ambacher Oliver
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
HEMT circuits;
III-V semiconductors;
MMIC amplifiers;
aluminium compounds;
coplanar transmission lines;
gallium compounds;
integrated circuit design;
integrated circuit manufacture;
integrated circuit measurement;
wide band gap semiconductors;
AlGaN-GaN;
CW operation;
HEMT single chip E-band power amplifier MMIC;
continuous wave operation;
four-stage high power amplifier chip;
frequency 71 GHz to 76 GHz;
gain 16 dB to 18 dB;
grounded coplanar transmission line technology;
high-electron-mobility transistors;
millim;
34.
High-Performance GaN-on-Diamond HEMTs Fabricated by Low-Temperature Device Transfer Process
机译:
通过低温器件转移工艺制造的高性能GaN /金刚石HEMT
作者:
Chu Kenneth K.
;
Chao Pane C.
;
Diaz Jose A.
;
Yurovchak Thomas
;
Schmanski Bernard J.
;
Creamer Carlton T.
;
Sweetland Scott
;
Kallaher Raymond L.
;
McGray Craig
;
Via Glen D.
;
Blevins John D.
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
III-V semiconductors;
diamond;
gallium compounds;
high electron mobility transistors;
thermal conductivity;
wide band gap semiconductors;
GaN;
GaN-on-diamond;
epitaxial wafer;
frequency 10 GHz;
high-electron-mobility transistors;
high-performance HEMT;
high-thermal-conductivity diamond substrate;
low-temperature device transfer process;
thermal measurements;
Diamonds;
Gallium nitride;
HEMTs;
MODFETs;
Performance evaluation;
Silicon carbide;
Substrates;
35.
A Novel 100 MHz-45 GHz GaN HEMT Low Noise Non-Gate-Terminated Distributed Amplifier Based on a 6-Inch 0.15µm GaN-SiC mm-Wave Process Technology
机译:
基于6英寸0.15μmGaN-SiC毫米波工艺技术的新型100 MHz-45 GHz GaN HEMT低噪声无栅极端接分布式放大器
作者:
Kobayashi Kevin W.
;
Denninghoff Dan
;
Miller Dain
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
III-V semiconductors;
MMIC amplifiers;
distributed amplifiers;
high electron mobility transistors;
low noise amplifiers;
millimetre wave amplifiers;
semiconductor technology;
wide band gap semiconductors;
GaN;
GaN-SiC;
HEMT;
NF;
frequency 100 MHz to 45 GHz;
high electron mobility transistor;
low noise gate-termination-less cascode DA MMIC;
low noise nongate terminated distributed amplifier;
mm-wave process technology;
noise figure;
resistive terminated approach;
size 0.15 mum;
wafer process technology;
Distributed a;
36.
III-V MOSFETs for Future CMOS
机译:
用于未来CMOS的III-V MOSFET
作者:
del Alamo J.A.
;
Antoniadis D.A.
;
Lin J.
;
Lu W.
;
Vardi A.
;
Zhao X.
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
CMOS integrated circuits;
III-V semiconductors;
MOSFET;
elemental semiconductors;
silicon;
III-V MOSFET;
III-V compound semiconductors;
Si;
Si electronics;
nonSi CMOS technology;
CMOS integrated circuits;
Current density;
Indium gallium arsenide;
Logic gates;
MOSFET;
Silicon;
37.
HBT Model Scaling for Different Epi Materials and Geometries
机译:
针对不同Epi材料和几何形状的HBT模型缩放
作者:
Yingying Yang
;
Zampardi Peter J.
;
Kwok Kai
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
design of experiments;
heterojunction bipolar transistors;
semiconductor device models;
DOE;
HBT model scaling;
base doping based;
base thickness;
design of experiment;
device design parameter;
ledge length variation;
physics-based scalable models;
transit time;
Current density;
Doping;
Heterojunction bipolar transistors;
Inductors;
Mathematical model;
Optical wavelength conversion;
Semiconductor process modeling;
38.
More Than Moore - Wafer Scale Integration of Dissimilar Materials on a Si Platform
机译:
超越摩尔-Si平台上异种材料的晶圆级集成
作者:
Kazior Thomas E.
;
LaRoche Jeffery R.
;
Ip Kelly
;
Kennedy Theodore
;
Knickerbocker John
;
Tsang Cornelia
;
Soirez Lovelace
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
BiCMOS integrated circuits;
CMOS integrated circuits;
Ge-Si alloys;
III-V semiconductors;
copper;
dielectric materials;
foundries;
gallium compounds;
high electron mobility transistors;
integrated circuit interconnections;
logic circuits;
mixed analogue-digital integrated circuits;
semiconductor technology;
silicon;
three-dimensional integrated circuits;
wafer bonding;
wide band gap semiconductors;
3D heterogeneous integration approach;
3DHI;
Au;
BiCMOS;
CMOS logic;
Cu;
GaN;
HEMT;
III-V semiconductor;
Si;
SiC;
SiGe;
TDV;
TSV;
39.
Comparison of Technologies for APT and ET Applications
机译:
APT和ET应用技术的比较
作者:
Moser Brian
;
Zampardi Peter J.
;
Tenberge Marc Schulze
;
Limanto Denny
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
heterojunction bipolar transistors;
power amplifiers;
APT power amplifiers;
HBT material designs;
PAE;
RF-Knee;
average power tracking power amplifiers;
envelope tracking power amplifiers;
waterfall curve;
waterfall measurements;
Correlation;
Gain;
Gallium arsenide;
Heterojunction bipolar transistors;
PHEMTs;
Radio frequency;
Silicon germanium;
40.
120 GHz 256QAM GaAs Transceiver Module for Over-10Gbps Wireless Communications
机译:
适用于10Gbps以上无线通信的120 GHz 256QAM GaAs收发器模块
作者:
Iino Satoshi
;
Ito Masaharu
;
Wada Yasushi
;
Kuwabara Toshihide
;
Marumoto Tsunehisa
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
III-V semiconductors;
band-pass filters;
data communication;
error statistics;
field programmable gate arrays;
gallium arsenide;
high electron mobility transistors;
millimetre wave amplifiers;
millimetre wave filters;
quadrature amplitude modulation;
radio transceivers;
BER;
BPF;
FPGA;
GaAs;
QAM GaAs transceiver module;
band pass filter;
bandwidth 500 MHz;
bit error rate;
distance 3.7 m;
frequency 120 GHz;
gain 2 dB;
gain 23 dB;
hardware demodulation;
horn antenna;
mHEMT technology;
millimeter wave amplifier;
p-HEMT techn;
41.
High Performance Resonant Tunneling Diode Oscillators for THz Applications
机译:
适用于THz应用的高性能谐振隧穿二极管振荡器
作者:
Jue Wang
;
Alharbi Khalid
;
Ofiare Afesomeh
;
Haiping Zhou
;
Khalid Ata
;
Cumming David
;
Wasige Edward
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
III-V semiconductors;
MMIC oscillators;
aluminium compounds;
gallium arsenide;
indium compounds;
millimetre wave oscillators;
phase noise;
resonant tunnelling diodes;
D-band;
Insub0.53/subGasub0.47/subAs-AlAs;
MMIC;
THz applications;
circuit topology;
circuit-based RTD oscillator;
frequency 110 GHz to 170 GHz;
high performance resonant tunneling diode oscillators;
monolithic microwave integrated circuit;
phase noise;
power 0.17 mW;
power 0.24 mW;
power 0.34 mW;
Coplanar waveguides;
Frequency measurement;
Micro;
42.
Self-Heating in a GaN-Based Heterojunction Field-Effect Transistor Investigated by Ultraviolet and Visible Micro-Raman Spectroscopy
机译:
紫外可见可见拉曼光谱研究的GaN基异质结场效应晶体管中的自热
作者:
Nazari Mohammad
;
Hancock Bobby Logan
;
Piner Edwin L.
;
Holtz Mark W.
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
III-V semiconductors;
Raman spectra;
aluminium compounds;
gallium compounds;
high electron mobility transistors;
nucleation;
ultraviolet spectra;
visible spectra;
wide band gap semiconductors;
AlGaN barrier layers;
AlGaN transition;
AlGaN-GaN;
AlGaN-GaN transistor;
AlN;
AlN nucleation;
GaN buffer;
GaN-based heterojunction field-effect transistor;
Si;
direct measurements;
phonon shifts;
self-heating;
silicon substrate;
thermal boundary resistance;
thermal simulation;
ultraviolet measurements probe;
ultraviolet spectrosco;
43.
120W Ka Band Power Amplifier Utilizing GaN MMICs and Coaxial Waveguide Spatial Power Combining
机译:
利用GaN MMIC和同轴波导空间功率组合的120W Ka波段功率放大器
作者:
Courtney Patrick G.
;
Jim Zeng
;
Thuan Tran
;
Hung Trinh
;
Behan Scott
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
III-V semiconductors;
MMIC power amplifiers;
coaxial waveguides;
power combiners;
wide band gap semiconductors;
GaN;
GaN MMIC;
Ka band power amplifier;
TWTA;
antipodal finline antenna array;
coaxial waveguide combiner;
coaxial waveguide spatial power combining;
frequency 27 GHz to 31 GHz;
microwave monolithic integrated circuit amplifiers;
power 10 W;
power 120 W;
solid state amplifiers;
traveling wave tube amplifiers;
Assembly;
Blades;
Gallium nitride;
MMICs;
Microstrip;
Power amplifiers;
Power generation;
44.
Future of Integrated Coherent Optics: Pluggable Optics and Beyond
机译:
集成相干光学的未来:可插拔光学及其他
作者:
Betty Ian
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
integrated optics;
light coherence;
modems;
optical communication;
analog electronics;
coherent optical modems;
integrated coherent optics;
line-side transport solution;
optical components;
pluggable optics;
telecommunications industry;
ubiquitous coherent optical communications;
Digital signal processing;
Integrated optics;
Modems;
Optical fibers;
Optical receivers;
45.
Single-Chip GaN X-Band MMIC Dynamic Supply PAs
机译:
单芯片GaN X波段MMIC动态电源PA
作者:
Popovic Zoya
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
DC-DC power convertors;
III-V semiconductors;
MMIC power amplifiers;
UHF power amplifiers;
gallium compounds;
harmonics;
switched current circuits;
wide band gap semiconductors;
GaN;
MMIC GaN PA;
PAPR broadband signals;
SM-PA;
X-band carrier frequency;
cascode UHF PA;
dynamic supply PA;
frequency 100 MHz;
harmonic injection;
integrated single-chip supply modulated power amplifier;
peak-to-average power ratio signals;
power 10 W;
single-chip GaN X-band MMIC;
switching DC-DC converter;
Bandwidth;
Gallium nitride;
MMICs;
M;
46.
250 GHz SiGe-BiCMOS Cascaded Single-Stage Distributed Amplifier
机译:
250 GHz SiGe-BiCMOS级联单级分布式放大器
作者:
Testa Paolo Valerio
;
Paulo Robert
;
Carta Corrado
;
Ellinger Frank
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
BiCMOS integrated circuits;
Ge-Si alloys;
cascade networks;
distributed amplifiers;
millimetre wave amplifiers;
BiCMOS technology;
CSSDA;
DC power;
SiGe;
bandwidth 170 GHz;
cascaded single-stage distributed amplifier;
frequency 250 GHz;
gain 13 dB;
power 74 mW;
size 0.13 mum;
wideband application;
Bandwidth;
BiCMOS integrated circuits;
Capacitors;
Distributed amplifiers;
Gain;
Resistors;
Silicon germanium;
47.
300-GHz Band 20-Gbps ASK Transmitter Module Based on InP-HEMT MMICs
机译:
基于InP-HEMT MMIC的300GHz频段20Gbps ASK发射机模块
作者:
Hamada Hiroshi
;
Kosugi Toshihiko
;
Ho-jin Song
;
Yaita Makoto
;
El Moutaouakil Amine
;
Matsuzaki Hideaki
;
Hirata Akihiko
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
HEMT integrated circuits;
III-V semiconductors;
field effect MIMIC;
indium compounds;
millimetre wave power amplifiers;
modulators;
radio transmitters;
ASK modulator;
ASK transmitter module;
HEMT MMIC;
InP;
amplitude shift keying transmitter;
bit rate 20 Gbit/s;
frequency 300 GHz;
high electron mobility transistor;
modulator circuit;
monolithic microwave integrated circuits;
power amplifier;
size 80 nm;
Amplitude shift keying;
Delays;
Logic gates;
MMICs;
Power amplifiers;
Radio transmitters;
48.
340-440mW Broadband, High-Efficiency E-Band PA's in InP HBT
机译:
InP HBT中的340-440mW宽带,高效E波段PA
作者:
Griffith Zach
;
Urteaga Miguel
;
Rowell Petra
;
Pierson Richard
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
III-V semiconductors;
MMIC power amplifiers;
bipolar integrated circuits;
indium compounds;
wideband amplifiers;
E-band solid state power amplifier;
HBT;
bandwidth 33 GHz;
broadband power amplifier;
high-efficiency E-band power amplifier;
multifinger heterojunction bipolar transistors;
power 340 W to 440 W;
size 250 nm;
Bandwidth;
Gain;
Gallium nitride;
Heterojunction bipolar transistors;
III-V semiconductor materials;
Indium phosphide;
Radio frequency;
49.
A 112Gb/s 4-PAM Transceiver Chipset in 0.18µm SiGe BiCMOS Technology for Optical Communication Systems
机译:
采用0.18µm SiGe BiCMOS技术的112Gb / s 4-PAM收发器芯片组,用于光通信系统
作者:
Shahramian Shahriar
;
Lee Jeffrey
;
Weiner Joe
;
Aroca Ricardo
;
Baeyens Yves
;
Kaneda Noriaki
;
Young-Kai Chen
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
BiCMOS integrated circuits;
Ge-Si alloys;
feedforward;
integrated optoelectronics;
optical interconnections;
optical links;
optical transceivers;
phase locked loops;
pulse amplitude modulation;
PAM transceiver chipset;
PLL;
SiGe;
SiGe BiCMOS technology;
baud-rate clock;
data recovery system;
feed-forward equalization;
lock acquisition;
optical communication systems;
optical link;
power 8 W;
receiver IC;
single-mode fiber;
size 0.18 mum;
transmitter IC;
voltage 3.3 V;
voltage 3.5 V;
Adaptive optics;
Clocks;
Optical attenuat;
50.
Envelope Modulator X-Band MMICs on Highly Integrated 3D Tunable Microcoax Substrate
机译:
高度集成的3D可调谐微同轴基板上的包络调制器和X波段MMIC
作者:
Kimball D.F.
;
Kazeimi H.
;
Yan J.J.
;
Theilmann P.T.
;
Telleiz I.
;
Collins G.
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
Long Term Evolution;
MMIC power amplifiers;
modulators;
next generation networks;
wireless channels;
LTE signals;
X-band MMIC;
bandwidth 500 MHz;
complex waveforms;
envelope power modulators;
envelope tracking power amplifier;
highly integrated 3D tunable microcoax substrate;
next generation wireless communication;
Bandwidth;
Gallium nitride;
MMICs;
Modulation;
Peak to average power ratio;
Power amplifiers;
Radio frequency;
51.
Progress in InP HEMT Submillimeter Wave Circuits and Packaging
机译:
InP HEMT亚毫米波电路和封装的研究进展
作者:
Leong K.
;
Mei X.B.
;
Yoshida W.
;
Lange M.
;
Zamora A.
;
Gorospe B.
;
Deal W.R.
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
HEMT integrated circuits;
III-V semiconductors;
MMIC amplifiers;
analogue integrated circuits;
electronics packaging;
indium compounds;
submillimetre wave amplifiers;
HEMT MMIC technology;
HEMT submillimeter wave circuits;
InP;
SMMW frequencies;
THz frequencies;
Terahertz frequencies;
exciter function;
frequency 0.85 THz;
frequency multiplication;
packaged amplifiers;
power amplification;
submillimeter frequencies;
HEMTs;
III-V semiconductor materials;
Indium phosphide;
Integrated circuits;
Receivers;
Substrates;
52.
A 22 dBm, 0.6 mm² D-Band SiGe HBT Power Amplifier Using Series Power Combining Sub-Quarter-Wavelength Baluns
机译:
一个采用串联功率组合亚四分之一波长平衡巴伦的22 dBm,0.6mm²D波段SiGe HBT功率放大器
作者:
Daneshgar Saeid
;
Buckwalter James F.
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
BiCMOS analogue integrated circuits;
Ge-Si alloys;
baluns;
microwave integrated circuits;
microwave power amplifiers;
BiCMOS technology;
D-band HBT power amplifier;
Si-SiGe;
frequency 100 GHz;
frequency 114 GHz to 130 GHz;
power 160 mW;
series power combining technique;
size 0.6 mm;
size 90 nm;
subquarter-wavelength baluns;
Bandwidth;
BiCMOS integrated circuits;
Computer architecture;
Heterojunction bipolar transistors;
Impedance matching;
Power generation;
Silicon germanium;
53.
A Watt-Class, High-Efficiency, Digitally-Modulated Polar Power Amplifier in SOI CMOS
机译:
SOI CMOS中的瓦特级高效数字调制极性功率放大器
作者:
Diddi Varish
;
Gheidi Hamed
;
Youjiang Liu
;
Buckwalter James
;
Asbeck Peter
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
CMOS analogue integrated circuits;
code division multiple access;
field effect transistors;
radiofrequency power amplifiers;
silicon-on-insulator;
ACPR requirements;
ACW;
CMOS digital PA;
FET amplifier;
SOI CMOS technology;
Si;
WCDMA uplink signals;
Watt-class power amplifier;
amplitude control word;
binary-weighted cells;
digital power amplifier;
digitally-modulated polar power amplifier;
drain efficiency;
frequency 5 MHz;
frequency 900 MHz;
size 0.18 mum;
unary cells;
CMOS integrated circuits;
CMOS technology;
Multia;
54.
High Frequency InGaAs Nanowire MOSFETs
机译:
高频InGaAs纳米线MOSFET
作者:
Lind E.
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
III-V semiconductors;
MOSFET;
elemental semiconductors;
gallium arsenide;
indium compounds;
millimetre wave transistors;
nanowires;
silicon;
DC characterization;
InGaAs;
InP substrates;
RF characterization;
Si;
Si substrates;
compact modeling;
frequency 100 GHz;
frequency 155 GHz;
frequency 290 GHz to 250 GHz;
lateral nanowire MOSFET;
lateral tri-gate nanowire devices;
nonparabolic ballistic charge-current compact model;
rectangular nanowire FET;
vertical gate-all-around InAs wires;
vertical nanowire MOSFET;
voltage 0.;
55.
A 56-Gb/s PAM4 InP HBT Driver IC Compensating for Nonlinearity of Extinction Curve of EAM
机译:
补偿EAM消光曲线非线性的56 Gb / s PAM4 InP HBT驱动器IC
作者:
Kishi Toshiki
;
Nagatani Munehiko
;
Kanazawa Shigeru
;
Kobayashi Wataru
;
Yamazaki Hiroshi
;
Ida Minoru
;
Kurishima Kenji
;
Nogawa Masafumi
;
Kimura Shunji
;
Nosaka Hideyuki
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
III-V semiconductors;
driver circuits;
electro-optical modulation;
electroabsorption;
error statistics;
heterojunction bipolar transistors;
indium compounds;
millimetre wave transistors;
pulse amplitude modulation;
BER;
EAM;
HBT technology;
InP;
PAM4 HBT driver IC;
bit error rate;
electroabsorption modulator;
extinction curve;
frequency 290 GHz;
frequency 320 GHz;
heterojunction bipolar transistors;
modulation voltage swing;
optical domain;
optical eye openings;
optical output waveform;
pulse amplitude modulation;
recei;
56.
A Highly Integrated 60-GHz 6-Channel Transceiver Chip in 0.35 µm SiGe Technology for Smart Sensing and Short-Range Communications
机译:
采用0.35 µm SiGe技术的高度集成的60 GHz 6通道收发器芯片,用于智能传感和短距离通信
作者:
Nasr I.
;
Karagozler E.
;
Poupyrev I.
;
Trotta S.
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
Ge-Si alloys;
intelligent sensors;
millimetre wave oscillators;
phase noise;
radio transceivers;
voltage-controlled oscillators;
2-channel transmitter;
4-channel receiver;
current 300 mA;
frequency 100 kHz;
frequency 57 GHz to 64 GHz;
gain 19 dB;
highly integrated 6-channel transceiver chip;
phase noise;
short-range communications;
smart sensing;
voltage 3.3 V;
wide tuning range integrated VCO;
Frequency measurement;
Power generation;
Power measurement;
Receivers;
Semiconductor device measurement;
Transmitters;
Voltage;
57.
Monolithically-Integrated Mulitlevel Inverter on Lateral GaN-on-Si Technology for High-Voltage Applications
机译:
基于横向GaN-on-Si技术的单片集成多电平逆变器,用于高压应用
作者:
Weiss B.
;
Reiner R.
;
Waltereit P.
;
Muller S.
;
Wespel M.
;
Quay R.
;
Ambacher O.
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
III-V semiconductors;
aluminium compounds;
gallium compounds;
invertors;
rectifiers;
AlGaN-GaN;
DC link;
current 5 A;
fully integrated monolithic single-phase diode-clamped multilevel converter;
high-voltage AlGaN-GaN-on-Si technology;
inverter;
monolithic single-phase DCM converter;
power chip;
rectifier;
HEMTs;
Inverters;
Logic gates;
Schottky diodes;
Topology;
58.
A 6-41 GHz Distributed Amplifier with Supply Scaling for Efficiency Enhancement
机译:
具有电源缩放功能的6-41 GHz分布式放大器,可提高效率
作者:
Levy Cooper S.
;
Buckwalter James F.
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
III-V semiconductors;
distributed amplifiers;
gallium compounds;
microwave amplifiers;
millimetre wave amplifiers;
silicon compounds;
wide band gap semiconductors;
GaN;
SSDA;
SiC;
band-pass distributed amplifier;
drain efficiency;
frequency 6 GHz to 41 GHz;
multiple supply voltages;
power added efficiency;
size 0.15 mum;
supply scaling;
supply-scaled distributed amplifier;
wideband efficiency enhancement techniques;
Distributed amplifiers;
Gallium nitride;
Impedance;
Power amplifiers;
Power transmission lines;
Semicond;
59.
A 70 GHz Bidirectional Front-End for a Half-Duplex Transceiver in 90-nm SiGe BiCMOS
机译:
用于90nm SiGe BiCMOS的半双工收发器的70 GHz双向前端
作者:
Kijsanayotin Tissana
;
Jun Li
;
Buckwalter James F.
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
BiCMOS analogue integrated circuits;
Ge-Si alloys;
low noise amplifiers;
mixers (circuits);
power amplifiers;
pulse compression;
radio transceivers;
radiocommunication;
receiving antennas;
time division multiplexing;
transmitting antennas;
BiCMOS process;
E-band;
PALNA;
SiGe;
TDD point-to-point communication system;
TX-RX antenna;
bidirectional front-end transceiver circuit;
bidirectional power amplifier;
conversion gain;
current 18 mA;
frequency 70 GHz;
half-duplex system;
half-duplex transceiver;
high frequency trans;
60.
A Lossy Electromagnetic Bandgap Structure for Mode Suppression in Chip Scale Packages
机译:
用于芯片级封装中模式抑制的有损电磁带隙结构
作者:
McKinzie William E.
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
ceramic packaging;
chip scale packaging;
flip-chip devices;
integrated circuit modelling;
microwave integrated circuits;
millimetre wave integrated circuits;
network routing;
photonic band gap;
vias;
E field magnitude;
LTCC CSP;
LTCC lid;
broadband millimeter wave parasitic mode suppression;
cavity floor;
cavity mode suppression;
chip scale packages;
conductive metal vias;
end-to-end transmission coefficient;
flip-chip die;
full-wave simulations;
group delay;
integrated lossy EBG structure;
lossy electromagnetic band;
61.
A Low Noise, DC-135GHz MOS-HBT Distributed Amplifier for Receiver Applications
机译:
适用于接收器应用的低噪声DC-135GHz MOS-HBT分布式放大器
作者:
Hoffman James
;
Voinigescu Sorin P.
;
Chevalier P.
;
Cathelin Andreia
;
Schvan P.
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
BiCMOS integrated circuits;
Ge-Si alloys;
analogue-digital conversion;
channel bank filters;
distributed amplifiers;
heterojunction bipolar transistors;
millimetre wave power amplifiers;
optical fibre amplifiers;
optical receivers;
ADC;
DC-MOS-HBT;
MOS-HBT cascode;
PRBS-31 patterns;
SiGe;
SiGe BiCMOS process;
distributed amplifier;
eye diagram measurements;
fiberoptic systems;
frequency 135 GHz;
gain 8.5 dB;
instrumentation receivers;
power 99 mW;
receiver applications;
size 0.36 mm;
size 1 mm;
size 55 nm;
voltage 3.3 V;
62.
Electro-Optical Co-Design to Minimize Power Consumption of a 32 GBd Optical IQ-Transmitter Using InP MZ-Modulators
机译:
使用InP MZ调制器的电光协同设计可最大程度地降低32 GBd光学IQ发送器的功耗
作者:
Wolf N.
;
Yan L.
;
Choi J.-H.
;
Kapa T.
;
Wunsch S.
;
Klotzer R.
;
Velthaus K.-O.
;
Bach H.-G.
;
Schell M.
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
Ge-Si alloys;
III-V semiconductors;
differential phase shift keying;
electro-optical modulation;
indium compounds;
optical transmitters;
power consumption;
quadrature phase shift keying;
CFP4;
DPSK;
InP;
MZ-modulators;
QPSK;
SiGe;
electro-optical co-design;
frequency 190 GHz;
frequency 200 GHz;
optical IQ-transmitter;
power 290 mW;
power consumption;
Assembly;
Bandwidth;
Impedance;
Mathematical model;
Modulation;
Power demand;
Radio frequency;
63.
A MMIC GaN HEMT Voltage-Controlled-Oscillator with High Tuning Linearity and Low Phase Noise
机译:
具有高调谐线性度和低相位噪声的MMIC GaN HEMT压控振荡器
作者:
Thanh Ngoc Thi Do
;
Szhau Lai
;
Horberg Mikael
;
Zirath Herbert
;
Kuylenstierna Dan
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
HEMT circuits;
MMIC oscillators;
gallium compounds;
phase noise;
voltage-controlled oscillators;
GaN;
MMIC GaN HEMT voltage-controlled-oscillator;
VCO;
frequency 1 MHz;
frequency 100 kHz;
frequency 6.45 GHz to 7.55 GHz;
oscillation frequency;
phase noise;
tuning linearity;
tuning range;
Frequency measurement;
Gallium nitride;
HEMTs;
Phase noise;
Tuning;
Voltage-controlled oscillators;
64.
Lumped-Element Modeling of Millimeter-Wave HEMT Parasitics via Full-Wave Electromagnetic Analysis
机译:
基于全波电磁分析的毫米波HEMT寄生虫的集总建模
作者:
Karisan Yasir
;
Caglayan Cosan
;
Trichopoulos Georgios C.
;
Sertel Kubilay
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
coplanar waveguides;
equivalent circuits;
high electron mobility transistors;
millimetre wave field effect transistors;
broadband lumped-element parasitic equivalent circuit;
circuit extraction procedure;
coplanar waveguide;
electromagnetic interaction;
full-wave electromagnetic analysis;
gate-to-drain mutual inductance;
lumped-element modeling;
millimeter-wave HEMT parasitic;
mmW high electron mobility transistor;
two-finger HEMT topology;
Electrodes;
Equivalent circuits;
Frequency measurement;
HEMTs;
Integrated;
65.
GaN MMIC for Ka-Band with 18W
机译:
适用于18W Ka-Band的GaN MMIC
作者:
Takagi K.
;
Ng C.Y.
;
Sakurai H.
;
Matstushita K.
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
HEMT circuits;
III-V semiconductors;
MMIC power amplifiers;
aluminium compounds;
gallium compounds;
silicon compounds;
wide band gap semiconductors;
AlGaN-GaN;
GaN MMIC;
HEMT;
Ka-band high power amplifier MMIC;
MMIC chip;
SiC;
frequency 29 GHz to 31 GHz;
gain 10.2 dB;
high power solid-state power amplifier;
power 18 W;
size 0.2 mum;
size 4.0 mm;
size 5.5 mm;
voltage 28 V;
Field effect transistors;
Gain;
Gallium nitride;
Logic gates;
MMICs;
Power amplifiers;
Power generation;
66.
An Evaluation of Extraction Methods for the External Collector Resistance for InP DHBTs
机译:
InP DHBT的外部集电极电阻提取方法的评估
作者:
Nardmann T.
;
Schroter M.
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
III-V semiconductors;
heterojunction bipolar transistors;
indium compounds;
semiconductor device models;
DC characteristics;
InP;
InP DHBT;
compact models;
external collector resistance;
extraction methods;
maximum junction capacitance values;
process technology;
time constants;
Heterojunction bipolar transistors;
III-V semiconductor materials;
Indium phosphide;
Integrated circuit modeling;
Resistance;
Semiconductor device measurement;
67.
A Polystrata® 820 mW G-Band Solid State Power Amplifier
机译:
Polystrata®820 mW G波段固态功率放大器
作者:
Rollin Jean-Marc
;
Miller David
;
Urteaga Miguel
;
Griffith Zachary M.
;
Kazemi Hooman
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
III-V semiconductors;
MMIC power amplifiers;
heterojunction bipolar transistors;
indium compounds;
integrated circuit manufacture;
lead bonding;
micromachining;
power combiners;
power dividers;
CPW transition;
DHBT PA MMIC;
G-band solid state power amplifier;
InP;
Nuvotronics;
PolyStrata 3D additive fabrication process;
SSPA;
batch additive manufacturing process;
broadband transitions;
frequency 200 GHz to 230 GHz;
functional power density;
insertion loss;
microlength-wire-bonds;
micromachined WR4 E-probe;
power 380 m;
68.
An Overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform
机译:
极化结平台上基于GaN的单片功率集成电路技术概述
作者:
Nakajima Akira
;
Nishizawa Sin-ichi
;
Ohashi Hiromichi
;
Kubota Shunsuke
;
Kayanuma Rei
;
Tsutsui Kazuo
;
Kakushima Kuniyuki
;
Wakabayashi Hitoshi
;
Iwai Hiroshi
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
III-V semiconductors;
aluminium compounds;
gallium compounds;
monolithic integrated circuits;
polarisation;
power integrated circuits;
power semiconductor diodes;
power transistors;
wide band gap semiconductors;
2D electron gas;
2D hole gas;
2DEG;
2DHG;
GaN-AlGaN-GaN;
PJ technologies;
high voltage transistors;
monolithic power integrated circuit technology;
n-channel transistors;
p-channel transistors;
polarization charges;
polarization-junction platform;
polarization-junction technologies;
temperature independent pr;
69.
Compact Low-Power Optical/Electrical Devices Enabling Pluggable Coherent Transceivers for Datacom
机译:
紧凑的低功耗光学/电气设备,可实现用于数据通信的可插拔相干收发器
作者:
Yamanaka Shogo
;
Onaka Hiroshi
;
Ishida Osamu
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
optical links;
optical modulation;
optical transceivers;
wavelength division multiplexing;
LSI;
ROADM rings;
SMF link;
bit rate 100 Gbit/s;
coherent CFP transceivers;
compact low-power electrical devices;
compact low-power optical devices;
compact optical modulators;
compact optical receivers;
datacom;
error-free operation;
form-factor pluggable transceivers;
long-haul WDM;
long-haul wavelength division multiplexing;
low-power digital signal processing;
pluggable coherent transceivers;
power consumption;
regional re;
70.
Current Status of Gallium Oxide-Based Power Device Technology
机译:
氧化镓基功率器件技术的现状
作者:
Higashiwaki Masataka
;
Sasaki Kohei
;
Wong Man Hoi
;
Kamimura Takafumi
;
Goto Ken
;
Nomura Kazushiro
;
Thieu Quang Tu
;
Togashi Rie
;
Murakami Hisashi
;
Kumagai Yoshinao
;
Monemar Bo
;
Koukitu Akinori
;
Kuramata Akito
;
Masui Takekazu
;
Yamakoshi Shigenobu
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
III-V semiconductors;
MOSFET;
Schottky barriers;
Schottky diodes;
gallium compounds;
semiconductor growth;
semiconductor thin films;
silicon compounds;
vapour phase epitaxial growth;
wide band gap semiconductors;
Gasub2/subOsub3/sub;
GaN;
Schottky barrier diodes;
SiC;
device characterization;
device processing;
gallium oxide-based power device technology;
halide vapor phase epitaxy;
homoepitaxial thin film growth;
material properties;
melt-grown bulk single crystals;
metal oxide semiconductor field effect tr;
71.
DARPA MMW System Programs and How They Drive Can Compound Semiconductor Technology Needs
机译:
DARPA MMW系统程序及其驱动方式可以满足化合物半导体技术的需求
作者:
Wallace H. Bruce
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
MMIC;
indoor communication;
military radar;
millimetre wave radar;
road vehicle radar;
silicon;
DARPA MMW system programs;
MMIC program;
Si;
automotive radar;
compound semiconductor technology;
indoor communications;
silicon technologies;
Arrays;
Compounds;
Indium phosphide;
MMICs;
Mobile communication;
Radar;
Silicon;
72.
Efficiency First: Outphasing Architectures for Power Amplification of High-PAPR Signals
机译:
效率至上:用于高PAPR信号功率放大的淘汰架构
作者:
Barton Taylor W.
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
microwave power amplifiers;
efficiency first approach;
high-PAPR signal;
linear output control;
microwave power amplification;
outphasing architecture;
peak-to-average power ratio;
Bandwidth;
Loading;
Microwave circuits;
Power generation;
Radio frequency;
Switches;
73.
Compact W-Band PA MMICs in Commercially Available 0.1-µm GaAs PHEMT Process
机译:
紧凑型W波段PA MMIC,采用市售的0.1 µm GaAs PHEMT工艺
作者:
Bessemoulin A.
;
Rodriguez M.
;
Tarazi J.
;
McCulloch G.
;
Parker A.E.
;
Mahon S.J.
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
III-V semiconductors;
MMIC power amplifiers;
driver circuits;
gain measurement;
gallium arsenide;
heterojunction bipolar transistors;
indium compounds;
integrated circuit design;
power transistors;
GaAs;
GaN;
HBT;
InP;
PHEMT process;
PHEMT technology;
compact W-band PA MMIC;
core amplifier;
frequency 80 GHz to 100 GHz;
linear gain;
medium power amplifiers;
power 280 mW;
power densities;
size 0.1 mum;
size 0.25 mm;
size 0.97 mm;
size 1.95 mm;
size 3.5 mm;
Frequency measurement;
Gain;
Gallium arsenide;
MMICs;
Power amplifiers;
P;
74.
Evaluating Thermal Composites Using Asymptotic Homogenization
机译:
使用渐近均质化评估热复合材料
作者:
Beckert Michael
;
Nadler Jason H.
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
curing;
finite element analysis;
power electronics;
resins;
thermal conductivity;
thermal management (packaging);
thermal stresses;
CTE;
asymptotic homogenization analysis;
bulk thermal conductivity;
curing process;
finite element software;
heat curable epoxy;
high powered electronic devices;
thermal composites;
thermal management;
thermal stresses;
Conductivity;
Heating;
Stress;
Thermal conductivity;
Thermal expansion;
Thermal resistance;
Thermal stresses;
75.
More Than Moore - Wafer Scale Integration of Dissimilar Materials on a Si Platform
机译:
超过摩尔 - 晶圆级集成在SI平台上的不同材料
作者:
Kazior Thomas E.
;
LaRoche Jeffery R.
;
Ip Kelly
;
Kennedy Theodore
;
Knickerbocker John
;
Tsang Cornelia
;
Soirez Lovelace
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
BiCMOS integrated circuits;
CMOS integrated circuits;
Ge-Si alloys;
III-V semiconductors;
copper;
dielectric materials;
foundries;
gallium compounds;
high electron mobility transistors;
integrated circuit interconnections;
logic circuits;
mixed analogue-digital integrated circuits;
semiconductor technology;
silicon;
three-dimensional integrated circuits;
wafer bonding;
wide band gap semiconductors;
3D heterogeneous integration approach;
3DHI;
Au;
BiCMOS;
CMOS logic;
Cu;
GaN;
HEMT;
III-V semiconductor;
Si;
SiC;
SiGe;
TDV;
TSV;
circuit optimization;
complementary metal oxide semiconductor;
copper damascene interconnect;
dissimilar material;
gold;
high electron mobility transistor;
integration density;
interconnect metallurgy;
logic circuit;
microelectronics;
mixed signal IC;
more than Moore;
oxide bonding;
silicon foundry;
silicon platform technology;
thermal management;
through-dielectric-via;
through-substrate-via;
76.
DARPA MMW System Programs and How They Drive Can Compound Semiconductor Technology Needs
机译:
DARPA MMW系统程序及其驱动器如何复合半导体技术需求
作者:
Wallace H. Bruce
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
MMIC;
indoor communication;
military radar;
millimetre wave radar;
road vehicle radar;
silicon;
DARPA MMW system programs;
MMIC program;
Si;
automotive radar;
compound semiconductor technology;
indoor communications;
silicon technologies;
Arrays;
Compounds;
Indium phosphide;
MMICs;
Mobile communication;
Radar;
Silicon;
77.
Lumped-Element Modeling of Millimeter-Wave HEMT Parasitics via Full-Wave Electromagnetic Analysis
机译:
全波电磁分析毫米波HEMT寄生诱导物的集成元素建模
作者:
Karisan Yasir
;
Caglayan Cosan
;
Trichopoulos Georgios C.
;
Sertel Kubilay
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
coplanar waveguides;
equivalent circuits;
high electron mobility transistors;
millimetre wave field effect transistors;
broadband lumped-element parasitic equivalent circuit;
circuit extraction procedure;
coplanar waveguide;
electromagnetic interaction;
full-wave electromagnetic analysis;
gate-to-drain mutual inductance;
lumped-element modeling;
millimeter-wave HEMT parasitic;
mmW high electron mobility transistor;
two-finger HEMT topology;
Electrodes;
Equivalent circuits;
Frequency measurement;
HEMTs;
Integrated circuit modeling;
Layout;
Logic gates;
78.
Advances in InP HEMT WR1.5 Amplifier MMICs
机译:
INP HEMT WR1.5放大器MMIC的进步
作者:
Zamora A.
;
Mei X.B.
;
Leong K.M.K.H.
;
Lange M.
;
Lee J.
;
Yoshida W.
;
Gorospe B.S.
;
Deal W.R.
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
III-V semiconductors;
MMIC amplifiers;
high electron mobility transistors;
indium compounds;
InP;
InP HEMT WR1.5 amplifier MMIC;
WR1.5 band;
comparable gain numbers;
device peripheries;
four amplifier designs;
on-wafer measured data;
Coplanar waveguides;
Gain;
HEMTs;
III-V semiconductor materials;
Indium phosphide;
MMICs;
Substrates;
79.
Compact Model Validation Strategies Based on Dedicated and Benchmark Circuit Blocks for the mm-Wave Frequency Range
机译:
基于专用和基准电路块的MM波频率范围的紧凑型模型验证策略
作者:
Ardouin B.
;
Schroter M.
;
Zimmer T.
;
Aufinger K.
;
Pfeiffer U.
;
Raya C.
;
Mukherjee A.
;
Malz S.
;
Fregonese S.
;
DEsposito R.
;
De Matos M.
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
integrated circuit design;
millimetre wave integrated circuits;
benchmark circuit blocks;
compact model validation strategies;
dedicated circuit blocks;
frequency 220 GHz;
mm-wave frequency range;
model qualification;
validation circuits;
Current density;
Frequency measurement;
Integrated circuit modeling;
Semiconductor process modeling;
Transistors;
Transmission line measurements;
80.
HBT Model Scaling for Different Epi Materials and Geometries
机译:
HBT模型缩放,用于不同的EPI材料和几何形状
作者:
Yingying Yang
;
Zampardi Peter J.
;
Kwok Kai
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
design of experiments;
heterojunction bipolar transistors;
semiconductor device models;
DOE;
HBT model scaling;
base doping based;
base thickness;
design of experiment;
device design parameter;
ledge length variation;
physics-based scalable models;
transit time;
Current density;
Doping;
Heterojunction bipolar transistors;
Inductors;
Mathematical model;
Optical wavelength conversion;
Semiconductor process modeling;
81.
Electro-Optical Co-Design to Minimize Power Consumption of a 32 GBd Optical IQ-Transmitter Using InP MZ-Modulators
机译:
电光共同设计,可使用INP MZ-调制器最小化32 GBD光学IQ变送器的功耗
作者:
Wolf N.
;
Yan L.
;
Choi J.-H.
;
Kapa T.
;
Wunsch S.
;
Klotzer R.
;
Velthaus K.-O.
;
Bach H.-G.
;
Schell M.
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
Ge-Si alloys;
III-V semiconductors;
differential phase shift keying;
electro-optical modulation;
indium compounds;
optical transmitters;
power consumption;
quadrature phase shift keying;
CFP4;
DPSK;
InP;
MZ-modulators;
QPSK;
SiGe;
electro-optical co-design;
frequency 190 GHz;
frequency 200 GHz;
optical IQ-transmitter;
power 290 mW;
power consumption;
Assembly;
Bandwidth;
Impedance;
Mathematical model;
Modulation;
Power demand;
Radio frequency;
82.
An Evaluation of Extraction Methods for the External Collector Resistance for InP DHBTs
机译:
用于INP DHBT的外部收集器电阻提取方法的评价
作者:
Nardmann T.
;
Schroter M.
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
III-V semiconductors;
heterojunction bipolar transistors;
indium compounds;
semiconductor device models;
DC characteristics;
InP;
InP DHBT;
compact models;
external collector resistance;
extraction methods;
maximum junction capacitance values;
process technology;
time constants;
Heterojunction bipolar transistors;
III-V semiconductor materials;
Indium phosphide;
Integrated circuit modeling;
Resistance;
Semiconductor device measurement;
83.
A Highly Integrated 60-GHz 6-Channel Transceiver Chip in 0.35 #181;m SiGe Technology for Smart Sensing and Short-Range Communications
机译:
一种高度集成的60-GHz 6通道收发器,在0.35μmSiGe技术中进行智能传感和短程通信
作者:
Nasr I.
;
Karagozler E.
;
Poupyrev I.
;
Trotta S.
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
Ge-Si alloys;
intelligent sensors;
millimetre wave oscillators;
phase noise;
radio transceivers;
voltage-controlled oscillators;
2-channel transmitter;
4-channel receiver;
current 300 mA;
frequency 100 kHz;
frequency 57 GHz to 64 GHz;
gain 19 dB;
highly integrated 6-channel transceiver chip;
phase noise;
short-range communications;
smart sensing;
voltage 3.3 V;
wide tuning range integrated VCO;
Frequency measurement;
Power generation;
Power measurement;
Receivers;
Semiconductor device measurement;
Transmitters;
Voltage-controlled oscillators;
84.
VO2 Switches for Millimeter and Submillimeter-Wave Applications
机译:
VO2开关毫米和亚倍波应用
作者:
Hillman C.
;
Stupar P.A.
;
Griffith Z.
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
S-parameters;
millimetre wave devices;
submillimetre wave devices;
switches;
vanadium compounds;
S-parameter uniformity;
VOlt;
subgt;
2lt;
/subgt;
electronically scanned phased array;
frequency 220 GHz;
insertion loss;
loss 1.3 dB;
millimeter-wave SPST switch;
single-pole single-throw series;
submillimeter-wave application;
terahertz frequency;
vanadium dioxide switch;
Capacitance;
Contacts;
Geometry;
Heating;
Insertion loss;
Radio frequency;
Scattering parameters;
85.
Comparison of Technologies for APT and ET Applications
机译:
适用于APT和ET应用的技术比较
作者:
Moser Brian
;
Zampardi Peter J.
;
Tenberge Marc Schulze
;
Limanto Denny
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
heterojunction bipolar transistors;
power amplifiers;
APT power amplifiers;
HBT material designs;
PAE;
RF-Knee;
average power tracking power amplifiers;
envelope tracking power amplifiers;
waterfall curve;
waterfall measurements;
Correlation;
Gain;
Gallium arsenide;
Heterojunction bipolar transistors;
PHEMTs;
Radio frequency;
Silicon germanium;
86.
Challenges amp; Solutions for High Volume Production in SiGe BICMOS amp; CMOS Technologies for High-Frequency and Optical Communications
机译:
高频和光学通信中SIGE BICMOS和CMOS技术大量生产挑战与解决方案
作者:
Galy Philippe
;
Chevalier Pascal
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
BiCMOS integrated circuits;
Ge-Si alloys;
Internet of Things;
MOSFET;
electronic equipment manufacture;
electrostatic discharge;
heterojunction bipolar transistors;
integrated circuit design;
integrated circuit manufacture;
low-power electronics;
mobile radio;
optical communication equipment;
silicon-on-insulator;
ESD;
IoT;
MOS transistors;
SiGe;
SiGe BICMOS technologies;
SiGe HBT BiCMOS55;
UTBB FDSOI technologies;
WLC;
active devices;
data transfer;
electrostatic discharge;
high volume production;
high-frequency communications;
integrated circuit design;
low power applications;
optical communications;
passive devices;
smart cars;
smart phones;
wireless communications;
BiCMOS integrated circuits;
CMOS integrated circuits;
CMOS technology;
Electrostatic discharges;
Heterojunction bipolar transistors;
Radio frequency;
Silicon germanium;
87.
MIT Virtual Source RF Model as a Tool for GaN-Based LNA and Oscillator Design
机译:
麻省理工学院虚拟源RF模型作为基于GAN的LNA和振荡器设计的工具
作者:
Radhakrishna Ujwal
;
Pilsoon Choi
;
Li-Shuan Peh
;
Antoniadis Dimitri
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
III-V semiconductors;
S-parameters;
frequency response;
gallium compounds;
high electron mobility transistors;
low noise amplifiers;
oscillators;
phase noise;
radiofrequency amplifiers;
semiconductor device models;
semiconductor device noise;
wide band gap semiconductors;
1/f noise;
GaN;
HEMT;
ISF;
LNA;
MIT virtual source RF model;
MVSG model;
RF low noise amplifier;
RF-circuit element;
S-parameter;
antenna switch;
carrier charge;
device-flicker;
device-level noise;
frequency 1.4 GHz;
frequency 5.9 GHz;
frequency response;
high electron mobility transistor;
impulse sensitivity function;
large-signal device-switching behavior;
noise figure measurement;
noise-dominated phase noise;
oscillator design;
pseudoinvertor ring oscillator;
voltage 12 V;
Gallium nitride;
Integrated circuit modeling;
Mathematical model;
Noise measurement;
Phase noise;
Radio frequency;
88.
Development of Silicon Photonic Products for Telecom amp; Datacom
机译:
电信和数据交易的硅光子产品的开发
作者:
Poulin Michel
;
Latrasse Christine
;
Picard Marie-Josee
;
Painchaud Yves
;
Pelletier Francois
;
Guy Martin
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
data communication;
optical communication;
optical modulation;
optical receivers;
silicon;
Si;
TeraXion;
coherent receivers;
datacom;
intensity modulators;
silicon photonic products;
telecom;
Couplings;
Modulation;
Optical fiber polarization;
Receivers;
Signal to noise ratio;
Silicon;
89.
A 56-Gb/s PAM4 InP HBT Driver IC Compensating for Nonlinearity of Extinction Curve of EAM
机译:
56-GB / S PAM4 INP HBT驱动器IC补偿EAM的消光曲线的非线性
作者:
Kishi Toshiki
;
Nagatani Munehiko
;
Kanazawa Shigeru
;
Kobayashi Wataru
;
Yamazaki Hiroshi
;
Ida Minoru
;
Kurishima Kenji
;
Nogawa Masafumi
;
Kimura Shunji
;
Nosaka Hideyuki
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
III-V semiconductors;
driver circuits;
electro-optical modulation;
electroabsorption;
error statistics;
heterojunction bipolar transistors;
indium compounds;
millimetre wave transistors;
pulse amplitude modulation;
BER;
EAM;
HBT technology;
InP;
PAM4 HBT driver IC;
bit error rate;
electroabsorption modulator;
extinction curve;
frequency 290 GHz;
frequency 320 GHz;
heterojunction bipolar transistors;
modulation voltage swing;
optical domain;
optical eye openings;
optical output waveform;
pulse amplitude modulation;
receiver sensitivity;
Adaptive optics;
Bit error rate;
Integrated optics;
Nonlinear optics;
Optical receivers;
Optical sensors;
Optical transmitters;
90.
Plasma Mode HEMTs with RTD Gate and Multiple 2DEG Channels for Stable Terahertz Operation
机译:
具有RTD栅极的等离子体模式HEMT和用于稳定的太赫兹操作的多个2deg通道
作者:
Volakis John L.
;
Bhardwaj Shubhendu
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
high electron mobility transistors;
plasma waves;
2DEG channels;
HEMT;
Maxwell-hydrodynamic solver;
RTD gate;
high electron mobility transistor;
plasma wave instability;
plasma wave model;
transmission spectra;
HEMTs;
Logic gates;
MODFETs;
Mathematical model;
Numerical models;
Plasma waves;
Plasmas;
91.
Efficiency First: Outphasing Architectures for Power Amplification of High-PAPR Signals
机译:
效率第一:突出的高PAPR信号的功率放大架构
作者:
Barton Taylor W.
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
microwave power amplifiers;
efficiency first approach;
high-PAPR signal;
linear output control;
microwave power amplification;
outphasing architecture;
peak-to-average power ratio;
Bandwidth;
Loading;
Microwave circuits;
Power generation;
Radio frequency;
Switches;
92.
A 112Gb/s 4-PAM Transceiver Chipset in 0.18#181;m SiGe BiCMOS Technology for Optical Communication Systems
机译:
112GB / S 4-PAM收发器芯片组,用于光通信系统的0.18μmSiGeBICMOS技术
作者:
Shahramian Shahriar
;
Lee Jeffrey
;
Weiner Joe
;
Aroca Ricardo
;
Baeyens Yves
;
Kaneda Noriaki
;
Young-Kai Chen
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
BiCMOS integrated circuits;
Ge-Si alloys;
feedforward;
integrated optoelectronics;
optical interconnections;
optical links;
optical transceivers;
phase locked loops;
pulse amplitude modulation;
PAM transceiver chipset;
PLL;
SiGe;
SiGe BiCMOS technology;
baud-rate clock;
data recovery system;
feed-forward equalization;
lock acquisition;
optical communication systems;
optical link;
power 8 W;
receiver IC;
single-mode fiber;
size 0.18 mum;
transmitter IC;
voltage 3.3 V;
voltage 3.5 V;
Adaptive optics;
Clocks;
Optical attenuators;
Optical fiber communication;
Optical receivers;
Optical transmitters;
93.
Compact Low-Power Optical/Electrical Devices Enabling Pluggable Coherent Transceivers for Datacom
机译:
紧凑型低功耗光/电气设备,可用于Datacom的可插拔相干收发器
作者:
Yamanaka Shogo
;
Onaka Hiroshi
;
Ishida Osamu
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
optical links;
optical modulation;
optical transceivers;
wavelength division multiplexing;
LSI;
ROADM rings;
SMF link;
bit rate 100 Gbit/s;
coherent CFP transceivers;
compact low-power electrical devices;
compact low-power optical devices;
compact optical modulators;
compact optical receivers;
datacom;
error-free operation;
form-factor pluggable transceivers;
long-haul WDM;
long-haul wavelength division multiplexing;
low-power digital signal processing;
pluggable coherent transceivers;
power consumption;
regional reconfigurable optical add-drop multiplexer rings;
Arrays;
Digital signal processing;
Large scale integration;
Modulation;
Optical receivers;
Transceivers;
Yttrium;
94.
A Lossy Electromagnetic Bandgap Structure for Mode Suppression in Chip Scale Packages
机译:
芯片尺度包装模式抑制的有损电磁带隙结构
作者:
McKinzie William E.
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
ceramic packaging;
chip scale packaging;
flip-chip devices;
integrated circuit modelling;
microwave integrated circuits;
millimetre wave integrated circuits;
network routing;
photonic band gap;
vias;
E field magnitude;
LTCC CSP;
LTCC lid;
broadband millimeter wave parasitic mode suppression;
cavity floor;
cavity mode suppression;
chip scale packages;
conductive metal vias;
end-to-end transmission coefficient;
flip-chip die;
full-wave simulations;
group delay;
integrated lossy EBG structure;
lossy electromagnetic bandgap structure;
low temperature cofired ceramic;
metal lid;
package cavity;
package lids;
package mode suppression;
package transitions;
patterned resistive film;
Cavity resonators;
Films;
Metals;
Metamaterials;
Microwave circuits;
Periodic structures;
95.
Indium Phosphide Based IQ-Modulators for Coherent Pluggable Optical Transceivers
机译:
基于磷化铟的IQ调制器,用于相干可插拔光学收发器
作者:
Rouvalis Efthymios
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
III-V semiconductors;
electro-optical modulation;
indium compounds;
optical transceivers;
power consumption;
100G/200G coherent transceivers;
IQ-modulators;
InP;
electro-optic Mach-Zehnder modulator technology;
electro-optic bandwidth;
insertion loss;
optical transceivers;
power consumption;
III-V semiconductor materials;
Indium phosphide;
Optical modulation;
Optical transmitters;
Transceivers;
Wavelength measurement;
96.
A New Active Quasi-Circulator Structure with High Isolation for 77-GHz Automotive FMCW Radar Systems in SiGe Technology
机译:
一种新的Active Quasi-循环结构,在SiGe技术中为77GHz汽车FMCW雷达系统高隔离
作者:
Porranzl Matthias
;
Wagner Christoph
;
Jaeger Herbert
;
Stelzer Andreas
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
CW radar;
FM radar;
Ge-Si alloys;
heterojunction bipolar transistors;
millimetre wave circulators;
millimetre wave transistors;
radar antennas;
road vehicle radar;
semiconductor device measurement;
tuning;
RX-path;
SiGe;
TX-RX isolation;
TX-path;
W-band impedance tuner;
active quasi-circulator structure;
antenna mismatch;
automotive FMCW radar systems;
frequency 200 GHz;
frequency 65 GHz to 85 GHz;
frequency ramp;
insertion loss;
monostatic FMCW radars;
on-wafer measurements;
receive signal;
silicon-germanium HBT technology;
transmit signal;
Antennas;
Bandwidth;
Impedance;
Radar;
Transmission line measurements;
Tuners;
Varactors;
97.
A Wideband 25-35GHz 5-Bit Low Power 2X2 CMOS Beam Forming Network IC for Reconfigurable Phased Arrays
机译:
宽带25-35GHz 5位低功率2X2 CMOS波束形成可重新配置相控阵列的网络IC
作者:
Daftari Naveen
;
Gilreath Leland
;
Smith Andrew D.
;
Thai Minh
;
Thai Khanh
;
Watanabe Monte
;
Yi-Cheng Wu
;
Jackson Charlie
;
Danial Ashley
;
Scherrer Dan
;
LaRocca Tim
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
CMOS integrated circuits;
field effect MIMIC;
intelligent control;
low-power electronics;
mean square error methods;
phase control;
shift registers;
wideband amplifiers;
RF signal power;
addressable shift register core;
adjacent III-V based chips;
amplifier power gating;
amplitude control;
frequency 25 GHz to 35 GHz;
intelligent control;
low-power calibration;
low-power modes;
measured RMS amplitude;
phase control;
phase error;
power 45 mW;
reconfigurable phased arrays;
reconfigurable wideband mm-wave CMOS;
wideband amplifier;
wideband low power CMOS beam forming network IC;
word length 2 bit;
word length 3 bit;
word length 5 bit;
Bandwidth;
CMOS integrated circuits;
Phase measurement;
Phase shifters;
Phased arrays;
Radio frequency;
98.
Surface-Potential-Based RF Large Signal Model for Gallium Nitride HEMTs
机译:
基于表面电位的氮化镓HEMT的RF大信号模型
作者:
Khandelwal S.
;
Ghosh S.
;
Chauhan Y.S.
;
Iniguez B.
;
Fjeldly T.A.
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
III-V semiconductors;
gallium compounds;
high electron mobility transistors;
semiconductor device models;
semiconductor quantum wells;
surface potential;
wide band gap semiconductors;
GaN;
HEMT;
Verilog-A;
advance SPICE model;
large signal RF compact model;
surface potential based RF large signal model;
triangular quantum well;
Data models;
Gallium nitride;
HEMTs;
Integrated circuit modeling;
MODFETs;
Mathematical model;
Radio frequency;
99.
120 GHz 256QAM GaAs Transceiver Module for Over-10Gbps Wireless Communications
机译:
120 GHz 256QAM GAAS收发器模块,用于超过10Gbps无线通信
作者:
Iino Satoshi
;
Ito Masaharu
;
Wada Yasushi
;
Kuwabara Toshihide
;
Marumoto Tsunehisa
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
III-V semiconductors;
band-pass filters;
data communication;
error statistics;
field programmable gate arrays;
gallium arsenide;
high electron mobility transistors;
millimetre wave amplifiers;
millimetre wave filters;
quadrature amplitude modulation;
radio transceivers;
BER;
BPF;
FPGA;
GaAs;
QAM GaAs transceiver module;
band pass filter;
bandwidth 500 MHz;
bit error rate;
distance 3.7 m;
frequency 120 GHz;
gain 2 dB;
gain 23 dB;
hardware demodulation;
horn antenna;
mHEMT technology;
millimeter wave amplifier;
p-HEMT technology;
size 0.13 mum;
size 70 nm;
transceiver modules;
wireless communications;
wireless data transmission test;
Bandwidth;
Bit error rate;
Data communication;
Gain;
MMICs;
Radio frequency;
Wireless communication;
100.
High Performance Resonant Tunneling Diode Oscillators for THz Applications
机译:
用于THz应用的高性能谐振隧道二极管振荡器
作者:
Jue Wang
;
Alharbi Khalid
;
Ofiare Afesomeh
;
Haiping Zhou
;
Khalid Ata
;
Cumming David
;
Wasige Edward
会议名称:
《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》
|
2015年
关键词:
III-V semiconductors;
MMIC oscillators;
aluminium compounds;
gallium arsenide;
indium compounds;
millimetre wave oscillators;
phase noise;
resonant tunnelling diodes;
D-band;
Inlt;
subgt;
0.53lt;
/subgt;
Galt;
subgt;
0.47lt;
/subgt;
As-AlAs;
MMIC;
THz applications;
circuit topology;
circuit-based RTD oscillator;
frequency 110 GHz to 170 GHz;
high performance resonant tunneling diode oscillators;
monolithic microwave integrated circuit;
phase noise;
power 0.17 mW;
power 0.24 mW;
power 0.34 mW;
Coplanar waveguides;
Frequency measurement;
Microwave circuits;
Microwave oscillators;
Phase noise;
Power generation;
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