Multilayer Silicon Nitride-on-Silicon Integrated Photonic Platforms

摘要

Progress in multilayer silicon nitride on silicon integrated photonic platforms will be presented. Such platforms enable improved passive photonic components in the telecommunication wavelength bands integrated with active silicon (and potentially hybrid silicon) components, while remaining compatible with wafer-scale silicon foundry fabrication and packaging processes. The reduced losses, scattering, thermo-optic coefficient, nonlinearity of moderate refractive index contrast silicon nitride waveguides compared to silicon waveguides motivate the development of such multilayer photonic platforms.