Co-integrated method of photonic devices on silicon photonics platform

摘要

PROBLEM TO BE SOLVED: To provide a method for co-integrating a photonic device, a Ge waveguide built-in photodetector, and a hybrid III-V/Si laser on a Si-base photonic platform.;SOLUTION: A method includes the steps of: preparing an Si-base photonic substrate having an Si device including a patterned Si waveguide structure; accumulating a dielectric layer, for example, an SiO₂ layer on a top part of the flattened Si-base photonic substrate; etching a groove on the dielectric layer at a proper etching depth, and exposing the patterned Si waveguide structure of the photonic substrate; selectively etching the exposed waveguide, creating a template for Ge growth, and leaving the thin Si layer as a seed layer for Ge growth; selectively growing Ge from the seed layer together with intensional Ge overgrowth; and flattening the Ge surface and leaving a Ge layer having reduced thickness of 100 nm-500 nm.;COPYRIGHT: (C)2013,JPO&INPIT