Monolithically-Integrated Mulitlevel Inverter on Lateral GaN-on-Si Technology for High-Voltage Applications

摘要

This work reports on the development of a fully integrated monolithic single-phase diode-clamped multilevel (DCM) converter in a high-voltage AlGaN/GaN-on-Si technology for high-power conversion applications. The power chip operates as an inverter (DC/AC) to produce a three level output voltage from a DC link as well as a rectifier (AC/DC) to feed a DC link with a desired voltage. The application range, the topology, and the design of the inverter are presented in detail. The integrated inverter circuit is dimensioned for U = +/- 400 V and I = 5 A. Furthermore measurements of the performance of the single devices on the integrated chip are demonstrated.