Electron Devices Integrated Circuits, Tech. Univ. Dresden, Dresden, Germany;
III-V semiconductors; heterojunction bipolar transistors; indium compounds; semiconductor device models; DC characteristics; InP; InP DHBT; compact models; external collector resistance; extraction methods; maximum junction capacitance values; process technology; time constants; Heterojunction bipolar transistors; III-V semiconductor materials; Indium phosphide; Integrated circuit modeling; Resistance; Semiconductor device measurement;
机译:亚微米InP / InGaAs DHBT模型的改进的外部基极电阻提取
机译:一种直接提取方法,以确定基于S参数测量的INP HBT器件的外在电阻,高达110GHz
机译:确定SiGe HBT集电极串联电阻的方法—各种技术的回顾与评估
机译:用于INP DHBT的外部收集器电阻提取方法的评价
机译:超过1 THz带宽的大规模InP / InGaAs DHBT
机译:用于人类免疫缺陷病毒1型RNA定量和PCR扩增的不同RNA提取方法和干燥血浆或血点储存条件的评估用于耐药性测试
机译:改进的亚微米Inp / InGaas DHBT模型的外部基极电阻提取
机译:采用Inp台面DHBT技术,在176 GHz时具有7 dB增益的共基极放大器